Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020137527 - METHOD FOR REMOVING DEPOSITS AND METHOD FOR FORMING FILM

Publication Number WO/2020/137527
Publication Date 02.07.2020
International Application No. PCT/JP2019/048351
International Filing Date 10.12.2019
IPC
H01L 21/314 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
Applicants
  • 昭和電工株式会社 SHOWA DENKO K.K. [JP]/[JP]
Inventors
  • 谷本 陽祐 TANIMOTO Yosuke
  • 長田 師門 OSADA Shimon
Agents
  • 田中 秀▲てつ▼ TANAKA Hidetetsu
  • 森 哲也 MORI Tetsuya
Priority Data
2018-24051525.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR REMOVING DEPOSITS AND METHOD FOR FORMING FILM
(FR) PROCÉDÉ DE RETRAIT DE DÉPÔTS ET PROCÉDÉ DE FORMATION DE FILM
(JA) 付着物除去方法及び成膜方法
Abstract
(EN)
Provided are: a method for removing deposits, the method being capable of removing sulfur-containing deposits which adhere to the inner surface of a chamber or the inner surface of a pipe connected to the chamber without dismantling the chamber; and a method for forming a film. Sulfur-containing deposits, which adhere to at least one among the inner surface of the chamber (10) and the inner surface of an exhaust pipe (15) connected to the chamber (10), are removed by reacting with a cleaning gas that includes an oxygen-containing compound gas.
(FR)
L'invention concerne : un procédé de retrait de dépôts, le procédé étant apte à retirer des dépôts contenant du soufre qui adhèrent à la surface interne d'une chambre ou la surface interne d'un tuyau relié à la chambre sans démonter la chambre ; et un procédé de formation d'un film. Des dépôts contenant du soufre, qui adhèrent à la surface intérieure de la chambre (10) et/ou la surface intérieure d'un tuyau d'échappement (15) relié à la chambre (10), sont retirés par réaction avec un gaz de nettoyage qui comprend un gaz composé contenant de l'oxygène.
(JA)
チャンバーの内面又はチャンバーに接続された配管の内面に付着している、硫黄を含有する付着物を、チャンバーを解体することなく除去することが可能な付着物除去方法及び成膜方法を提供する。チャンバー(10)の内面及びチャンバー(10)に接続された排気用配管(15)の内面の少なくとも一方に付着している、硫黄を含有する付着物を、酸素含有化合物ガスを含有するクリーニングガスと反応させることにより除去する。
Also published as
JP2020563036
Latest bibliographic data on file with the International Bureau