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1. WO2020137441 - PRETREATMENT CONDITION DETERMINATION METHOD FOR HEAT TREATMENT FURNACE, PRETREATMENT METHOD FOR HEAT TREATMENT FURNACE, HEAT TREATMENT DEVICE, AND PRODUCTION METHOD AND PRODUCTION DEVICE FOR HEAT-TREATED SEMICONDUCTOR WAFER

Publication Number WO/2020/137441
Publication Date 02.07.2020
International Application No. PCT/JP2019/047783
International Filing Date 06.12.2019
IPC
H01L 21/31 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H01L 21/324 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
CPC
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants
  • 株式会社SUMCO SUMCO CORPORATION [JP]/[JP]
Inventors
  • 桑野 嘉宏 KUWANO Yoshihiro
Agents
  • 特許業務法人特許事務所サイクス SIKS & CO.
Priority Data
2018-24544527.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PRETREATMENT CONDITION DETERMINATION METHOD FOR HEAT TREATMENT FURNACE, PRETREATMENT METHOD FOR HEAT TREATMENT FURNACE, HEAT TREATMENT DEVICE, AND PRODUCTION METHOD AND PRODUCTION DEVICE FOR HEAT-TREATED SEMICONDUCTOR WAFER
(FR) PROCÉDÉ DE DÉTERMINATION DE CONDITION DE PRÉTRAITEMENT POUR FOUR DE TRAITEMENT THERMIQUE, PROCÉDÉ DE PRÉTRAITEMENT POUR FOUR DE TRAITEMENT THERMIQUE, DISPOSITIF DE TRAITEMENT THERMIQUE, ET PROCÉDÉ DE PRODUCTION ET DISPOSITIF DE PRODUCTION POUR TRANCHE SEMI-CONDUCTRICE TRAITÉE THERMIQUEMENT
(JA) 熱処理炉の前処理条件の決定方法、熱処理炉の前処理方法、熱処理装置ならびに熱処理された半導体ウェーハの製造方法および製造装置
Abstract
(EN)
Provided is a pretreatment condition determination method for a heat treatment furnace, the pretreatment involving heating the interior of the heat treatment furnace while supplying a gas thereto, and the pretreatment condition determination method for the heat treatment furnace including: setting a plurality of combination candidates of supply gas types and heating temperatures; assigning to each combination candidate a score determined in accordance with the type of metal specified as a target of removal by the pretreatment; and using the assigned scores as an index to determine a supply gas type and heating temperature combination to be adopted as a pretreatment condition from among the plurality of candidates.
(FR)
L'invention concerne un procédé de détermination de condition de prétraitement pour un four de traitement thermique, le prétraitement impliquant le chauffage de l'intérieur du four de traitement thermique et la fourniture simultanée d'un gaz à celui-ci, et le procédé de détermination de condition de prétraitement pour le four de traitement thermique comprenant: le réglage d'une pluralité de candidats de combinaison de types de gaz d'alimentation et de températures de chauffage; l'attribution, à chaque candidat de combinaison, d'un score déterminé en fonction du type de métal spécifié en tant que cible d'élimination par le prétraitement; et l'utilisation des scores attribués en tant qu'indice pour déterminer une combinaison de type de gaz d'alimentation et de température de chauffage à adopter en tant que condition de prétraitement parmi la pluralité de candidats.
(JA)
熱処理炉の前処理条件の決定方法であって、上記前処理は上記熱処理炉の炉内をガスを供給しながら加熱することであり、供給ガスの種類と加熱温度との組み合わせの候補を複数設定すること、各組み合わせの候補に上記前処理による除去対象として特定した対象金属の種類に応じて決定された点数を付与すること、および、上記付与された点数を指標として上記複数の候補の中から前処理条件として採用する供給ガスの種類と加熱温度との組み合わせを決定することを含む熱処理炉の前処理条件の決定方法が提供される。
Also published as
JP2020563018
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