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1. WO2020137422 - OPTICAL TRANSMISSION DEVICE

Publication Number WO/2020/137422
Publication Date 02.07.2020
International Application No. PCT/JP2019/047675
International Filing Date 05.12.2019
IPC
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02-H01S5/30100
G02F 1/025 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
025in an optical waveguide structure
H04B 10/556 2013.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
10Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
50Transmitters
516Details of coding or modulation
548Phase or frequency modulation
556Digital modulation, e.g. differential phase shift keying or frequency shift keying
CPC
G02F 1/025
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
025in an optical waveguide structure
H01S 5/343
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
H01S 5/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
H04B 10/556
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
10Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
50Transmitters
516Details of coding or modulation
548Phase or frequency modulation
556Digital modulation, e.g. differential phase shift keying [DPSK] or frequency shift keying [FSK]
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 林 周作 HAYASHI, Shusaku
  • 西川 智志 NISHIKAWA, Satoshi
  • 秋山 浩一 AKIYAMA, Koichi
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2018-24150925.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) OPTICAL TRANSMISSION DEVICE
(FR) DISPOSITIF DE TRANSMISSION OPTIQUE
(JA) 光送信装置
Abstract
(EN)
An optical transmission device (1) is provided with a first multivalued optical phase modulation unit (10) and a first semiconductor optical amplification unit (30). The first semiconductor optical amplification unit (30) has a first active region (32) which includes a first multiple quantum well structure. When the number of first layers in a plurality of first well layers (32a) is n1 and a first length of the first active region (32) is L1(μm): (a) n1=5 and 400≦L1≦563; (b) n1=6 and 336≦L1≦470; (c) n1=7 and 280≦L1≦432; (d) n1=8 and 252≦L1≦397; (e) n1=9 and 224≦L1≦351; or (f) n1=10 and 200≦L1≦297.
(FR)
L'invention concerne un dispositif de transmission optique (1) pourvu d'une première unité de modulation de phase optique multivaluée (10) et d'une première unité d'amplification optique à semi-conducteur (30). La première unité d'amplification optique à semi-conducteur (30) possède une première région active (32) qui comprend une première structure à puits quantique multiple. Lorsque le nombre de premières couches dans une pluralité de premières couches de puits (32a) est n1 et qu'une première longueur de la première région active (32) est L1(μm) : (a) n1 = 5 et 400 ≦ L1 ≦ 563 ; (b) n1 = 6 et 336 ≦ L1 ≦ 470 ; (c) n1 = 7 et 280 ≦ L1 ≦ 432 ; (d) n1 = 8 et 252 ≦ L1 ≦ 397; (e) n1 = 9 et 224 ≦ L1 ≦ 351 ; ou (f) n1 = 10 et 200 ≦ L1 ≦ 297.
(JA)
光送信装置(1)は、第1多値光位相変調部(10)と、第1半導体光増幅部(30)とを備える。第1半導体光増幅部(30)の第1活性領域(32)は、第1多重量子井戸構造を含む。複数の第1井戸層(32a)の第1層数をn1とし、第1活性領域(32)の第1長さをL1(μm)とすると、(a)n1=5、かつ、400≦L1≦563、または、(b)n1=6、かつ、336≦L1≦470、または、(c)n1=7、かつ、280≦L1≦432、または、(d)n1=8、かつ、252≦L1≦397、または、(e)n1=9、かつ、224≦L1≦351、または、(f)n1=10、かつ、200≦L1≦297である。
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