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1. WO2020137370 - SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE

Publication Number WO/2020/137370
Publication Date 02.07.2020
International Application No. PCT/JP2019/047020
International Filing Date 02.12.2019
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 萬田 周治 MANDA, Shuji
  • 奥山 敦 OKUYAMA, Atsushi
  • 平野 智之 HIRANO, Tomoyuki
Agents
  • 特許業務法人つばさ国際特許事務所 TSUBASA PATENT PROFESSIONAL CORPORATION
Priority Data
2018-24450827.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE
(FR) APPAREIL D'IMAGERIE À SEMI-CONDUCTEUR ET DISPOSITIF ÉLECTRONIQUE
(JA) 固体撮像装置および電子機器
Abstract
(EN)
A solid-state imaging apparatus according to one embodiment of the present disclosure comprises a plurality of pixels. Each pixel comprises a photoelectric conversion part, a charge retaining part for retaining a charge transferred from the photoelectric conversion part, and a transfer transistor for transferring charge from the photoelectric conversion part to the charge retaining part. Each pixel further comprises a light-shielding part disposed in-layer between the photoelectric conversion part and the charge retaining part. An opening through which a vertical gate penetrates is provided in the light-shielding part. Each pixel further comprises a charge-blocking part which: is interposed between the vertical gate and an end, of the opening, that is closer to the charge retaining part; and blocks the transfer of charge to the transfer transistor.
(FR)
Un dispositif d'imagerie à semi-conducteur selon un mode de réalisation de la présente invention comprend une pluralité de pixels. Chaque pixel comprend: une partie de conversion photoélectrique, une partie de retenue pour retenir une charge transférée depuis la partie de conversion photoélectrique; et un transistor de transfert qui transfère la charge de la partie de conversion photoélectrique à la partie de retenue de charge. Chaque pixel comprend également une partie de protection contre la lumière disposée dans la couche entre la partie de conversion photoélectrique et la partie de retenue de charge. Une ouverture à travers laquelle pénètre une grille verticale est disposée dans la partie de protection contre la lumière. Chaque pixel comprend également une partie de blocage de charge qui: est interposée entre la grille verticale et une extrémité, de l'ouverture, qui est plus proche de la partie de retenue de charge; et bloque le transfert de charge vers le transistor de transfert.
(JA)
本開示の一実施の形態に係る固体撮像装置は、複数の画素を備えている。各画素は、光電変換部と、光電変換部から転送された電荷を保持する電荷保持部と、光電変換部から電荷保持部に電荷を転送する転送トランジスタとを有している。各画素は、光電変換部と電荷保持部との間の層内に配置された遮光部を更に有している。遮光部には、垂直ゲートが貫通する開口部が設けられている。各画素は、開口部のうち電荷保持部寄りの端縁と垂直ゲートとの間を介した、転送トランジスタへの電荷の転送を遮る遮電荷部を更に有している。
Also published as
JP2020562980
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