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1. WO2020137332 - HEAT-CONDUCTIVE SILICONE COMPOSITION AND SEMICONDUCTOR DEVICE

Publication Number WO/2020/137332
Publication Date 02.07.2020
International Application No. PCT/JP2019/046493
International Filing Date 28.11.2019
IPC
H01L 23/373 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
373Cooling facilitated by selection of materials for the device
C08K 9/02 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
9Use of pretreated ingredients
02Ingredients treated with inorganic substances
C08L 83/05 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
05containing silicon bound to hydrogen
C08L 83/07 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
07containing silicon bound to unsaturated aliphatic groups
C08K 3/08 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUSE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
3Use of inorganic substances as compounding ingredients
02Elements
08Metals
CPC
C08K 3/08
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUse of inorganic or non-macromolecular organic substances as compounding ingredients
3Use of inorganic substances as compounding ingredients
02Elements
08Metals
C08K 9/02
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUse of inorganic or non-macromolecular organic substances as compounding ingredients
9Use of pretreated ingredients
02Ingredients treated with inorganic substances
H01L 23/373
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
Applicants
  • 信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP]/[JP]
Inventors
  • 秋場 翔太 AKIBA Shota
  • 辻 謙一 TSUJI Kenichi
Agents
  • 特許業務法人牛木国際特許事務所 USHIKI & ASSOCIATES
Priority Data
2018-24094325.12.2018JP
2018-24094425.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) HEAT-CONDUCTIVE SILICONE COMPOSITION AND SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE SILICONE THERMOCONDUCTRICE ET DISPOSITIF À SEMI-CONDUCTEUR
(JA) 熱伝導性シリコーン組成物及び半導体装置
Abstract
(EN)
Provided is a heat-conductive silicone composition that provides excellent heat dissipation effects, effectively suppresses in-system air bubbles, and yields a cured product having excellent external appearance and physical properties. This heat-conductive silicone composition contains the following components (A), (B), (C), (D), and (E). (A) An organopolysiloxane containing, within the molecule, at least two alkenyl groups bonded to a silicon atom (B) An organohydrodiene polysiloxane containing, within the molecule, at least two hydrogen atoms bonded to a silicon atom (SiH group) (C) A hydrosilylation reaction catalyst (D) Silver powder having a tapped density of 3.0 g/cm3 or more, a specific surface area of 2.0 m2/g or less, and an aspect ratio of 1-30 (E) Palladium powder having an average grain diameter of 1-100 nm, or crystalline silica, amorphous silica, or carbon on which the palladium powder is carried
(FR)
L'invention concerne une composition de silicone thermoconductrice qui offre d'excellents effets de dissipation thermique, qui supprime efficacement les bulles d'air dans le système, et fournit un produit durci présentant d'excellentes propriétés physiques et une excellente apparence externe. La composition de silicone thermoconductrice contient les constituants suivants : (A), (B), (C), (D), et (E) : (A) un organopolysiloxane contenant, dans la molécule, au moins deux groupes alcényle liés à un atome de silicium, (B) un organohydrodiène polysiloxane contenant, dans la molécule, au moins deux atomes d'hydrogène liés à un atome de silicium (groupe SiH), (C) un catalyseur de réaction d'hydrosilylation, (D) une poudre d'argent ayant une densité tassée de 3,0 g/cm3 ou plus, une surface spécifique de 2,0 m2/g ou moins, et un facteur de forme de 1 à 30, (E) une poudre de palladium ayant un diamètre de grain moyen de 1 à 100 nm, ou de la silice cristalline, de la silice amorphe ou du carbone sur lequel la poudre de palladium est portée.
(JA)
良好な放熱効果を奏し、かつ系内の気泡を効果的に抑制させ、良好な外観や物性を有する硬化物を与える熱伝導性シリコーン組成物の提供。 下記、(A)、(B)、(C)、(D)及び(E)成分を含有する熱伝導性シリコーン組成物。 (A)ケイ素原子に結合したアルケニル基を1分子中に少なくとも2個含有するオルガノポリシロキサン (B)ケイ素原子に結合した水素原子(SiH基)を1分子中に少なくとも2個含有するオルガノハイドロジェンポリシロキサン (C)ヒドロシリル化反応用触媒 (D)タップ密度が3.0g/cm3以上であり、比表面積が2.0m2/g以下であり、かつアスペクト比が、1~30である銀粉末 (E)平均粒径が1nmから100nmであるパラジウム粉又は該パラジウム粉が担持された結晶性シリカ、非晶質シリカもしくはカーボン
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