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1. WO2020137309 - RESIST COMPOSITION

Publication Number WO/2020/137309
Publication Date 02.07.2020
International Application No. PCT/JP2019/046091
International Filing Date 26.11.2019
IPC
C08G 8/18 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
18with phenols substituted by carboxylic or sulfonic acid groups
C08G 8/20 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
20with polyhydric phenols
G03F 7/023 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
022Quinonediazides
023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
C08G 8/18
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
18with phenols substituted by carboxylic or sulfonic acid groups
C08G 8/20
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
20with polyhydric phenols
G03F 7/023
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
022Quinonediazides
023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
Applicants
  • DIC株式会社 DIC CORPORATION [JP]/[JP]
Inventors
  • 今田 知之 IMADA Tomoyuki
  • 長田 裕仁 NAGATA Hirohito
Agents
  • 小川 眞治 OGAWA Shinji
Priority Data
2018-24283426.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) RESIST COMPOSITION
(FR) COMPOSITION DE RÉSERVE
(JA) レジスト組成物
Abstract
(EN)
The purpose of the present invention is to provide a resist composition which exhibits high heat resistance and can be used in types of lithography that use electron beams and extreme ultraviolet radiation. Specifically, the present invention uses a resist composition that contains a metal salt of a novolac type phenolic resin (C), which is obtained using (A) an aromatic compound represented by formula (1) and (B) an aliphatic aldehyde as essential reaction raw materials. (In formula (1), R1 and R2 each independently denote a hydrogen atom, an aliphatic hydrocarbon group having 1-9 carbon atoms, an alkoxy group, an aryl group, an aralkyl group or a halogen atom. m and n each independently denote an integer between 0 and 4. In cases where a plurality of R1 groups are present, the plurality of R1 groups may be the same as, or different from, each other. In cases where a plurality of R2 groups are present, the plurality of R2 groups may be the same as, or different from, each other. R3 denotes a hydrogen atom, an aliphatic hydrocarbon group having 1-9 carbon atoms, or a structural moiety having one or more substituent groups selected from among alkoxy groups, halogen groups and hydroxyl groups on a hydrocarbon group.)
(FR)
L'invention a pour objet de fournir une composition de réserve qui possède une résistance à la chaleur élevée, et qui permet une application dans une lithographie mettant en œuvre un faisceau électronique et un rayonnement dans l'extrême ultraviolet. Plus spécifiquement, l'invention met en œuvre une composition de réserve qui contient un sel métallique d'une résine phénolique de type novolaque (C) ayant pour matières de départ réactives essentielles un composé aromatique (A) représenté par la formule (1) et un aldéhyde aliphatique (B). (Dans ladite formule (1), R et R représentent, chacun indépendamment, un atome d'hydrogène, un groupe hydrocarbure aliphatique de 1 à 9 atomes de carbone, un groupe alcoxy, un groupe aryle, un groupe aralkyle ou un atome d'halogène. m et n représentent, chacun indépendamment, un nombre entier compris entre 0 et 4. Dans le cas où R est présent en pluralité, les R peuvent être identiques les uns aux autres ou différents. Dans le cas où R est présent en pluralité, les R peuvent être identiques les uns aux autres ou différents. R représente un atome d'hydrogène, un groupe hydrocarbure aliphatique de 1 à 9 atomes de carbone, ou une fraction de structure ayant un substituant ou plus choisi parmi un groupe alcoxy, un groupe halogène et un groupe hydroxyle sur un groupe hydrocarbure.)
(JA)
高い耐熱性を有し、電子線及び極端紫外線を用いたリソグラフィに利用可能なレジスト組成物を提供することを目的とする。具体的には、下記式(1)で表される芳香族化合物(A)と脂肪族アルデヒド(B)とを必須の反応原料とするノボラック型フェノール樹脂(C)の金属塩を含むレジスト組成物を用いる。 (前記式(1)中、R及びRは、それぞれ独立に、水素原子、炭素原子数1~9の脂肪族炭化水素基、アルコキシ基、アリール基、アラルキル基又はハロゲン原子を表す。 m及びnは、それぞれ独立に、0~4の整数を表す。Rが複数ある場合、複数のRは互いに同じでも異なってもよい。Rが複数ある場合、複数のRは互いに同じでも異なってもよい。Rは、水素原子、炭素原子数1~9の脂肪族炭化水素基、又は炭化水素基上にアルコキシ基、ハロゲン基及び水酸基から選択される置換基を1以上有する構造部位を表す。)
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