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1. WO2020137306 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

Publication Number WO/2020/137306
Publication Date 02.07.2020
International Application No. PCT/JP2019/046026
International Filing Date 25.11.2019
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 佐々木 悠太 SASAKI, Yuta
  • ▲高▼橋 弘明 TAKAHASHI, Hiroaki
  • 藤原 直澄 FUJIWARA, Naozumi
  • 尾辻 正幸 OTSUJI, Masayuki
  • 加藤 雅彦 KATO, Masahiko
  • 山口 佑 YAMAGUCHI, Yu
Agents
  • 特許業務法人あい特許事務所 AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS
Priority Data
2018-24801828.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
Abstract
(EN)
This substrate processing method comprises: a pre-drying processing liquid supply step in which a pre-drying processing liquid, which is a solution obtained by dissolving a sublimable substance in a solvent, is supplied onto an upper surface of a substrate on which a pattern is formed, and a liquid film of the pre-drying processing liquid is formed on the upper surface of the substrate; a deposition step in which, by causing the solvent to be evaporated from the liquid film, a solid of the sublimable substance is deposited on the upper surface of the substrate; a concentration determination step in which, before the deposition of the solid of the sublimable substance in the deposition step, it is determined, on the basis of a film thickness reduction speed which is the speed at which the thickness of the liquid film is reduced by evaporation of the solvent, whether the concentration of the sublimable substance in the liquid film is within a reference concentration range; and a sublimation step in which, if it is determined in the concentration determination step that the concentration of the sublimable substance in the liquid film is within the reference concentration range, the solid of the sublimable substance is sublimated after completion of the deposition step.
(FR)
L'invention concerne un procédé de traitement de substrat comprenant : une étape d'alimentation en liquide de traitement de pré-séchage dans laquelle un liquide de traitement de pré-séchage, qui est une solution obtenue par dissolution d'une substance sublimable dans un solvant, est fournie sur une surface supérieure d'un substrat sur lequel est formé un motif, et un film liquide du liquide de traitement de pré-séchage est formé sur la surface supérieure du substrat ; une étape de dépôt dans laquelle, en amenant le solvant à s'évaporer à partir du film liquide, un solide de la substance sublimable est déposé sur la surface supérieure du substrat ; une étape de détermination de concentration dans laquelle, avant le dépôt du solide de la substance sublimable dans l'étape de dépôt, il est déterminé, sur la base d'une vitesse de réduction d'épaisseur de film qui est la vitesse à laquelle l'épaisseur du film liquide est réduite par évaporation du solvant, si la concentration de la substance sublimable dans le film liquide se situe dans une plage de concentration de référence ; et une étape de sublimation dans laquelle, s'il est déterminé à l'étape de détermination de concentration que la concentration de la substance sublimable dans le film liquide se trouve dans la plage de concentration de référence, le solide de la substance sublimable est sublimé après l'achèvement de l'étape de dépôt.
(JA)
基板処理方法は、昇華性物質が溶媒中に溶解した溶液である乾燥前処理液を、パターンが形成された基板の上面に供給して、前記乾燥前処理液の液膜を前記基板の前記上面に形成する乾燥前処理液供給工程と、前記液膜から前記溶媒を蒸発させることにより、前記昇華性物質の固体を前記基板の前記上面に析出させる析出工程と、前記析出工程において、前記昇華性物質の固体が析出する前に、前記溶媒の蒸発によって前記液膜の厚みが減少する速度である膜厚減少速度に基づいて、前記液膜中の前記昇華性物質の濃度が基準濃度範囲内であるか否かを判定する濃度判定工程と、前記濃度判定工程において前記液膜中の前記昇華性物質の濃度が基準濃度範囲内であると判定された場合に、前記析出工程の終了後に、前記昇華性物質の固体を昇華させる昇華工程とを含む。
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