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1. WO2020137303 - NITRIDE SEMICONDUCTOR DEVICE

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Publication Number WO/2020/137303
Publication Date 02.07.2020
International Application No. PCT/JP2019/046003
International Filing Date 25.11.2019
IPC
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/337 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
337with a PN junction gate
H01L 21/338 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 29/808 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
808with a PN junction gate
H01L 29/812 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
812with a Schottky gate
CPC
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
H01L 29/808
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
808with a PN junction gate ; , e.g. PN homojunction gate
H01L 29/812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
812with a Schottky gate
Applicants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP]
Inventors
  • 柴田　大輔 SHIBATA, Daisuke
  • 田村　聡之 TAMURA, Satoshi
  • 小川　雅弘 OGAWA, Masahiro
Agents
  • 新居　広守 NII, Hiromori
  • 寺谷　英作 TERATANI, Eisaku
  • 道坂　伸一 MICHISAKA, Shinichi
Priority Data
2018-24506327.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) NITRIDE SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR AU NITRURE
(JA) 窒化物半導体装置
front page image
Abstract
(EN)
This nitride semiconductor device (1) is provided with: a substrate (12); an n-type drift layer (14); a p-type block layer (16); a gate opening (20) which penetrates through the block layer (16) and reaches the drift layer (14); an electron transit layer (22) and an electron supply layer (24), which are provided along the inner surface of the gate opening (20); a gate electrode (30) which is provided above the electron supply layer (24) so as to cover the gate opening (20); a source opening (26) which penetrates through the electron supply layer (24) and the electron transit layer (22), and reaches the block layer (16); a source electrode (28) which is provided so as to cover the source opening (26), while being connected to the electron supply layer (24), the electron transit layer (22) and the block layer (16); and a drain electrode (32) which is provided on a surface of the substrate (12), said surface being on the reverse side of the block layer (16)-side surface. The bottom surface (30a) of the gate electrode (30) is closer to the drain electrode (32) than the bottom surface (16a) of the block layer (16).
(FR)
L'invention concerne un dispositif à semi-conducteur au nitrure (1) comprenant : un substrat (12) ; une couche de dérive de type n (14) ; une couche de bloc de type p (16) ; une ouverture de grille (20) qui pénètre à travers la couche de bloc (16) et atteint la couche de dérive (14) ; une couche de transit d'électrons (22) et une couche d'alimentation en électrons (24), qui sont disposées le long de la surface interne de l'ouverture de grille (20) ; une électrode de grille (30) qui est disposée au-dessus de la couche d'alimentation en électrons (24) de façon à recouvrir l'ouverture de grille (20) ; une ouverture de source (26) qui pénètre à travers la couche d'alimentation en électrons (24) et la couche de transit d'électrons (22), et atteint la couche de bloc (16) ; une électrode de source (28) qui est disposée de manière à recouvrir l'ouverture de source (26), tout en étant connectée à la couche d'alimentation en électrons (24), la couche de transit d'électrons (22) et la couche de bloc (16) ; et une électrode de drain (32) qui est disposée sur une surface du substrat (12), ladite surface étant sur le côté inverse de la surface côté couche de bloc (16). La surface inférieure (30a) de l'électrode de grille (30) est plus proche de l'électrode de drain (32) que la surface inférieure (16a) de la couche de bloc (16).
(JA)
窒化物半導体装置（１）は、基板（１２）と、ｎ型のドリフト層（１４）と、ｐ型のブロック層（１６）と、ブロック層（１６）を貫通し、ドリフト層（１４）にまで達するゲート開口部（２０）と、ゲート開口部（２０）の内面に沿って設けられた電子走行層（２２）及び電子供給層（２４）と、ゲート開口部（２０）を覆うように電子供給層（２４）の上方に設けられたゲート電極（３０）と、電子供給層（２４）及び電子走行層（２２）を貫通し、ブロック層（１６）にまで達するソース開口部（２６）と、ソース開口部（２６）を覆うように設けられ、電子供給層（２４）、電子走行層（２２）及びブロック層（１６）に接続されたソース電極（２８）と、基板（１２）の、ブロック層（１６）とは反対側に設けられたドレイン電極（３２）とを備え、ゲート電極（３０）の底面（３０ａ）は、ブロック層（１６）の底面（１６ａ）よりもドレイン電極（３２）に近い。
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