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1. WO2020137259 - SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

Publication Number WO/2020/137259
Publication Date 02.07.2020
International Application No. PCT/JP2019/045157
International Filing Date 18.11.2019
IPC
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
H04N 9/07 2006.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
9Details of colour television systems
04Picture signal generators
07with one pick-up device only
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
H04N 9/07
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
9Details of colour television systems
04Picture signal generators
07with one pick-up device only
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 入佐 綾香 IRISA Ayaka
  • 関 勇一 SEKI Yuichi
  • 井芹 有志 ISERI Yuji
Agents
  • 渡邊 薫 WATANABE Kaoru
Priority Data
2018-24867828.12.2018JP
2019-12616805.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
(FR) DISPOSITIF D'IMAGERIE MONOLITHIQUE ET APPAREIL ÉLECTRONIQUE
(JA) 固体撮像装置及び電子機器
Abstract
(EN)
Provided is a solid-state imaging device that can realize further improvement in image quality. The solid-state imaging device is provided with a plurality of imaging pixels arranged regularly according to a prescribed pattern, each of the imaging pixels having at least a semiconductor substrate on which a photoelectric converter is formed and a filter that is formed on a light receiving surface side of the semiconductor substrate and that transmits specific light. At least one imaging pixel from among the plurality of imaging pixels is replaced with a ranging pixel having a filter that transmits the specific light, thereby forming at least one ranging pixel. A partitioning wall part is formed between the filter of the at least one ranging pixel and a filter adjacent to the filter of the at least one ranging pixel. The partitioning wall part includes a material that is substantially identical to a material of the filter of the at least one imaging pixel that was replaced by the ranging pixel.
(FR)
L'invention concerne un dispositif d'imagerie monolithique qui peut effectuer une amélioration supplémentaire de la qualité d'image. Le dispositif d'imagerie monolithique est pourvu d'une pluralité de pixels d'imagerie agencés régulièrement selon un motif prescrit, chacun des pixels d'imagerie ayant au moins un substrat semi-conducteur sur lequel est formé un convertisseur photoélectrique et un filtre qui est formé sur un côté de surface de réception de lumière du substrat semi-conducteur et qui transmet une lumière spécifique. Au moins un pixel d'imagerie parmi la pluralité de pixels d'imagerie est remplacé par un pixel de télémétrie ayant un filtre qui transmet la lumière spécifique, ce qui permet de former au moins un pixel de télémétrie. Une partie de paroi de séparation est formée entre le filtre desdits pixels de télémétrie et un filtre adjacent au filtre desdits pixels de télémétrie. La partie de paroi de séparation comprend un matériau qui est sensiblement identique à un matériau du filtre desdits pixels d'imagerie qui a été remplacé par le pixel de télémétrie.
(JA)
画質の更なる向上が実現され得る固体撮像装置を提供すること。 一定のパターンに従って規則的に配置された複数の撮像画素を備え、 該撮像画素が、光電変換部が形成された半導体基板と、該半導体基板の光入射面側に形成された特定の光を透過するフィルタ、と、を少なくとも有し、該複数の撮像画素のうち少なくとも1つの該撮像画素が、該特定の光を透過するフィルタを有する測距画素に置き換えられて、該少なくとも1つの測距画素が形成され、該少なくとも1つの測距画素が有する該フィルタと、該少なくとも1つの測距画素が有する該フィルタと隣り合う該フィルタとの間に、隔壁部が形成され、該隔壁部が、該測距画素に置き換えられた該少なくとも1つの撮像画素が有する該フィルタの材料と略同一である材料を含む、固体撮像装置を提供する。
Also published as
JP2020562528
Latest bibliographic data on file with the International Bureau