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1. WO2020137187 - DOUBLE GRINDING METHOD

Publication Number WO/2020/137187
Publication Date 02.07.2020
International Application No. PCT/JP2019/043882
International Filing Date 08.11.2019
IPC
B24B 7/17 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
7Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
10Single-purpose machines or devices
16for grinding end faces, e.g. of gauges, rollers, nuts or piston rings
17for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
B24B 49/03 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
02according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
03according to the final size of the previously ground workpiece
B24B 49/04 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
02according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
04involving measurement of the workpiece at the place of grinding during grinding operation
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B24B 49/03
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
02according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
03according to the final size of the previously ground workpiece
B24B 49/04
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
02according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
04involving measurement of the workpiece at the place of grinding during grinding operation
B24B 7/17
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
7Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
10Single-purpose machines or devices
16for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
17for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社SUMCO SUMCO CORPORATION [JP]/[JP]
Inventors
  • 西村 好信 NISHIMURA Yoshinobu
Agents
  • 特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES
Priority Data
2018-24530227.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DOUBLE GRINDING METHOD
(FR) PROCÉDÉ DE DOUBLE MEULAGE
(JA) 両頭研削方法
Abstract
(EN)
This double grinding method comprises: a first grinding step in which grinding is performed until the thickness of a first wafer reaches a prescribed thickness while a grinding fluid is supplied in a prescribed amount to first and second main surfaces of the first wafer; a nanotopography measurement step in which the nanotopography of the first wafer is measured; and a second grinding step in which a grinding condition is adjusted on the basis of the result of the measurement performed in the nanotopography measurement step so that the nanotopography of a second wafer approaches zero, and grinding is performed until the thickness of the second wafer reaches the prescribed thickness. In the second grinding step, while the total amount of grinding fluid supplied in the first grinding step is maintained, the ratio of the amount of grinding fluid supplied to the first main surface of the second wafer and the amount of grinding fluid supplied to the second main surface of the second wafer is adjusted, and the second wafer is ground.
(FR)
Le procédé de double meulage selon l'invention comprend : une première étape de meulage dans laquelle un meulage est effectué jusqu'à ce que l'épaisseur d'une première tranche atteigne une épaisseur prescrite tandis qu'un fluide de meulage est fourni en une quantité prescrite sur une première et une seconde surfaces principales de la première tranche ; une étape de mesure de nanotopographie dans laquelle la nanotopographie de la première tranche est mesurée ; et une seconde étape de meulage dans laquelle une condition de meulage est ajustée sur la base du résultat de la mesure effectuée dans l'étape de mesure de nanotopographie de telle sorte que la nanotopographie d'une seconde tranche s'approche de zéro, et dans laquelle le meulage est effectué jusqu'à ce que l'épaisseur de la seconde tranche atteigne l'épaisseur prescrite. Dans la seconde étape de meulage, alors que la quantité totale de fluide de meulage fournie dans la première étape de meulage est maintenue, le rapport entre la quantité de fluide de meulage fournie sur la première surface principale de la seconde tranche et la quantité de fluide de meulage fourni sur la seconde surface principale de la seconde tranche est ajusté, et la seconde tranche est meulée.
(JA)
両頭研削方法は、第1のウェーハの第1,第2の主面に所定量の研削液を供給しつつ、第1のウェーハの厚さが所定厚さになるまで研削を行う第1の研削工程と、第1のウェーハのナノトポグラフィを計測するナノトポグラフィ計測工程と、ナノトポグラフィ計測工程の計測結果に基づいて、第2のウェーハのナノトポグラフィが0に近づくように研削条件を調整して、第2のウェーハの厚さが前記所定厚さになるまで研削を行う第2の削工程とを備え、第2の研削工程は、第1の研削工程における研削液の総供給量を維持しつつ、第2のウェーハの第1の主面に対する研削液の供給量と第2の主面に対する研削液の供給量との比率を調整して、第2のウェーハを研削する。
Also published as
Latest bibliographic data on file with the International Bureau