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1. WO2020137051 - WAFER TRANSPORT DEVICE, VAPOR DEPOSITION DEVICE, WAFER TRANSPORT METHOD, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER

Publication Number WO/2020/137051
Publication Date 02.07.2020
International Application No. PCT/JP2019/037641
International Filing Date 25.09.2019
IPC
H01L 21/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
C23C 16/458 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/677 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
CPC
C23C 16/458
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
H01L 21/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/677
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
677for conveying, e.g. between different workstations
Applicants
  • 株式会社SUMCO SUMCO CORPORATION [JP]/[JP]
Inventors
  • 楢原 和宏 NARAHARA Kazuhiro
  • 辻 雅之 TSUJI Masayuki
  • 胡盛 珀 KOMORI Haku
Agents
  • 特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES
Priority Data
2018-24136525.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) WAFER TRANSPORT DEVICE, VAPOR DEPOSITION DEVICE, WAFER TRANSPORT METHOD, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
(FR) DISPOSITIF DE TRANSPORT DE TRANCHE, DISPOSITIF DE DÉPÔT EN PHASE VAPEUR, PROCÉDÉ DE TRANSPORT DE TRANCHE ET PROCÉDÉ DE FABRICATION DE TRANCHE DE SILICIUM ÉPITAXIAL
(JA) ウェーハ移載装置、気相成長装置、ウェーハ移載方法およびエピタキシャルシリコンウェーハの製造方法
Abstract
(EN)
This wafer transport device is provided with a transfer means and a mounting means for mounting a silicon wafer transferred by the transfer means onto a susceptor (3). The mounting means is provided with a plurality of lift pins (71, 72, 73) and a relative moving means for causing the plurality of lift pins (71, 72, 73) and the susceptor (3) to be moved relative to each other. At least one of the transfer means and the mounting means is configured such that, when the silicon wafer is supported by the plurality of lift pins (71, 72, 73), a specific lift pin (71) makes an initial contact with a lower surface of the silicon wafer.
(FR)
L'invention concerne un dispositif de transport de tranche comprenant un moyen de transfert et un moyen de montage pour monter une tranche de silicium transférée par le moyen de transfert sur un suscepteur (3). Le moyen de montage comprend une pluralité de broches de levage (71, 72, 73) et un moyen de déplacement relatif pour amener la pluralité de broches de levage (71,72, 73) et le suscepteur (3) à être déplacés les uns par rapport aux autres. Au moins l'un des moyens de transfert et du moyen de montage est configuré de telle sorte que, lorsque la tranche de silicium est supportée par la pluralité de broches de levage (71, 72, 73), une broche de levage spécifique (71) effectue un contact initial avec une surface inférieure de la tranche de silicium.
(JA)
ウェーハ移載装置は、搬送手段と、搬送手段で搬送されたシリコンウェーハをサセプタ(3)に載置する載置手段とを備え、載置手段は、複数のリフトピン(71,72,73)と、複数のリフトピン(71,72,73)とサセプタ(3)とを相対移動させる相対移動手段とを備え、搬送手段と載置手段とのうち少なくとも一方の構成は、複数のリフトピン(71,72,73)でシリコンウェーハを支持するときに、特定のリフトピン(71)が最初にシリコンウェーハの下面に接触するように構成されている。
Also published as
KR1020217018403
Latest bibliographic data on file with the International Bureau