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1. WO2020137027 - SPUTTERING DEVICE AND SPUTTERING METHOD

Publication Number WO/2020/137027
Publication Date 02.07.2020
International Application No. PCT/JP2019/035870
International Filing Date 12.09.2019
IPC
C23C 14/34 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
CPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
Applicants
  • 株式会社アルバック ULVAC, INC. [JP]/[JP]
Inventors
  • 中野 賢明 NAKANO Katsuaki
Agents
  • 特許業務法人青莪 SEIGA PATENT AND TRADEMARK CORPORATION
Priority Data
2018-24247226.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SPUTTERING DEVICE AND SPUTTERING METHOD
(FR) DISPOSITIF DE PULVÉRISATION ET PROCÉDÉ DE PULVÉRISATION
(JA) スパッタリング装置及びスパッタリング方法
Abstract
(EN)
Provided is a sputtering device with which it is possible to improve the utilization efficiency of a target without detriment to the function of being able to symmetrically form a predetermined thin film with good coverage on the bottom surface and side surfaces of holes and trenches formed on the surface of the substrate to be treated. This sputtering device SM comprises a vacuum chamber 1 in which a target 21 is positioned, a plasma atmosphere is formed in the interior of the vacuum chamber and the target is subjected to sputtering, and sputter particles splashed from the target are adhered to and deposited on the surface of a substrate Sw positioned within the vacuum chamber, forming a predetermined thin film. An adhesion body 61 made from the same material as the target is provided, and at least the adhesion body 61a of the adhesion body 61, onto which sputter particles sprayed from the target are adhered, is positioned at a predetermined position within the vacuum chamber, and a bias power supply 62 which applies a bias voltage having a negative potential when forming a plasma atmosphere is connected to the adhesion body.
(FR)
L'invention concerne un dispositif de pulvérisation avec lequel il est possible d'améliorer le rendement d'utilisation d'une cible sans nuire à la fonction lui permettant d'être apte à former de manière symétrique une couche mince prédéterminée avec une bonne couverture sur la surface de fond et les surfaces latérales de trous et de tranchées formés sur la surface du substrat à traiter. Le dispositif de pulvérisation SM comprend une chambre à vide 1 dans laquelle une cible 21 est positionnée, une atmosphère de plasma est formée à l'intérieur de la chambre à vide et la cible est soumise à une pulvérisation, et des particules de pulvérisation projetées à partir de la cible adhèrent à et sont déposées sur la surface d'un substrat Sw positionné à l'intérieur de la chambre à vide, formant une couche mince prédéterminée. Un corps d'adhésion 61 constitué du même matériau que la cible est fourni, et au moins le corps d'adhésion 61a du corps d'adhésion 61, sur lequel des particules de pulvérisation projetées à partir de la cible adhèrent, est positionné à une position prédéterminée à l'intérieur de la chambre à vide, et une alimentation électrique polarisée 62 qui applique une tension polarisée ayant un potentiel négatif lors de la formation d'une atmosphère de plasma est reliée au corps d'adhésion.
(JA)
被処理基板表面に形成されたホールやトレンチの底面及び側面に良好なカバレッジや対称性で所定の薄膜が成膜できるという機能を損なうことなく、ターゲットの利用効率を向上させることができるスパッタリング装置を提供する。 ターゲット21が配置される真空チャンバ1を備え、真空チャンバ内にプラズマ雰囲気を形成してターゲットをスパッタリングし、ターゲットから飛散したスパッタ粒子を真空チャンバ内に配置される基板Sw表面に付着、堆積させて所定の薄膜を成膜する本発明のスパッタリング装置SMは、ターゲットから飛散したスパッタ粒子が付着する真空チャンバ内の所定位置に、少なくともスパッタ粒子の付着面61aをターゲットと同種の材料製とした付着体61を設け、付着体に、プラズマ雰囲気の形成時に負の電位を持ったバイアス電圧を印加するバイアス電源62が接続される。
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