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1. WO2020137021 - VAPOR DEPOSITION DEVICE AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER

Publication Number WO/2020/137021
Publication Date 02.07.2020
International Application No. PCT/JP2019/035621
International Filing Date 11.09.2019
IPC
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/24 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
24Deposition of silicon only
C23C 16/458 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
CPC
C23C 16/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
24Deposition of silicon only
C23C 16/458
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 株式会社SUMCO SUMCO CORPORATION [JP]/[JP]
Inventors
  • 楢原 和宏 NARAHARA Kazuhiro
  • 辻 雅之 TSUJI Masayuki
  • 胡盛 珀 KOMORI Haku
Agents
  • 特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES
Priority Data
2018-24136625.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) VAPOR DEPOSITION DEVICE AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
(FR) TRANCHE DE SILICIUM ÉPITAXIAL ET PROCÉDÉ DE FABRICATION D'UNE TRANCHE DUNE SILICIUM ÉPITAXIAL
(JA) 気相成長装置およびエピタキシャルシリコンウェーハの製造方法
Abstract
(EN)
This vapor deposition device is provided with a disc-shaped susceptor (3) and a susceptor support member for supporting and rotating the susceptor (3). The susceptor (3) has a plurality of fitting grooves (32). The susceptor support member has a plurality of support pins (53) respectively fitted into the plurality of fitting grooves (32). The fitting grooves (32) include an inclined portion (321B) which, while maintaining the state of being in contact with the support pins (53), allows the support pins (53) to move relative to the fitting grooves (32) in the circumferential direction of the susceptor (3) due to the weight of the susceptor (3), and a positioning portion (321A) which positions the support pins (53), having been moved relatively by the inclined portion (321B), in a specific position in the circumferential direction. The inclined portion (321B) and the positioning portion (321A) are formed continuously in the radial direction of the susceptor (3).
(FR)
Ce dispositif de dépôt en phase vapeur est pourvu d'un suscepteur en forme de disque (3) et d'un élément de support de suscepteur pour supporter et faire tourner le suscepteur (3). Le suscepteur (3) comporte une pluralité de rainures d'ajustement (32). L'élément de support de suscepteur comporte une pluralité de broches de support (53) ajustées respectivement dans la pluralité de rainures d'ajustement (32). Les rainures d'ajustement (32) comprennent une partie inclinée (321B) qui, tout en maintenant l'état de contact avec les broches de support (53), permet aux broches de support (53) de se déplacer par rapport aux rainures d'ajustement (32) dans la direction circonférentielle du suscepteur (3) du fait du poids du suscepteur (3), et une partie de positionnement (321A) qui positionne les broches de support (53), ayant été déplacées par rapport à la partie inclinée (321B), dans une position spécifique dans la direction circonférentielle. La partie inclinée (321B) et la partie de positionnement (321A) sont formées en continu dans la direction radiale du suscepteur (3).
(JA)
気相成長装置は、円板状のサセプタ(3)と、サセプタ(3)を支持して回転させるサセプタ支持部材とを備え、サセプタ(3)には、複数の嵌合溝(32)が設けられ、サセプタ支持部材には、複数の嵌合溝(32)のそれぞれに嵌め込まれる複数の支持ピン(53)が設けられ、嵌合溝(32)には、サセプタ(3)の自重によって、支持ピン(53)が接触した状態を維持したまま、当該支持ピン(53)を当該嵌合溝(32)に対してサセプタ(3)の周方向に相対移動させる傾斜部(321B)と、傾斜部(321B)によって相対移動させられた支持ピン(53)を周方向の特定位置に位置決めする位置決め部(321A)とが設けられ、傾斜部(321B)および位置決め部(321A)は、サセプタ(3)の径方向に連続的に形成されている。
Also published as
KR1020217018252
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