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1. WO2020136848 - MICRO-LED DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2020/136848
Publication Date 02.07.2020
International Application No. PCT/JP2018/048350
International Filing Date 27.12.2018
IPC
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
Applicants
  • 堺ディスプレイプロダクト株式会社 SAKAI DISPLAY PRODUCTS CORPORATION [JP]/[JP]
Inventors
  • 岸本 克彦 KISHIMOTO, Katsuhiko
Agents
  • 奥田 誠司 OKUDA Seiji
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MICRO-LED DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF À MICRO-DEL ET SON PROCÉDÉ DE FABRICATION
(JA) マイクロLEDデバイスおよびその製造方法
Abstract
(EN)
A micro-LED device of the present disclosure comprises: a crystal growth substrate (100) having an upper surface covered with a mask layer (150) having a plurality of openings (150G); and a front plane (200) including a plurality of micro-LEDs (220) each including one or a plurality of semiconductor rods having a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, and element isolation regions (240) located between the micro-LEDs. The element isolation region has at least one metal plug (24) electrically connected to the second semiconductor layer. This device comprises: an intermediate layer (300) including a first contact electrode (31) electrically connected to the first semiconductor layer and a second contact electrode (32) connected to the metal plug; and a backplane (400) formed on the intermediate layer.
(FR)
La présente invention concerne un dispositif à micro-DEL comprenant : un substrat de croissance cristalline (100) dont une surface supérieure est recouverte d'une couche de masque (150) possédant une pluralité d'ouvertures (150G) ; et un plan avant (200) dont une pluralité de micro-DEL (220) comprennent individuellement une ou plusieurs tiges semi-conductrices possédant une première couche semi-conductrice d'un premier type de conductivité et une seconde couche semi-conductrice d'un second type de conductivité, et des régions d'isolation d'éléments (240) situées entre les micro-DEL. La région d'isolation d'éléments comporte au moins une fiche métallique (24) électriquement connectée à la seconde couche semi-conductrice. Le présent dispositif comprend : une couche intermédiaire (300) comprenant une première électrode de contact (31) connectée électriquement à la première couche semi-conductrice et une seconde électrode de contact (32) connectée à la fiche métallique ; et un plan arrière (400) formé sur la couche intermédiaire.
(JA)
本開示のマイクロLEDデバイスは、複数の開口部(150G)を有するマスク層(150)によって上面が覆われた結晶成長基板(100)と、第1導電型の第1半導体層および第2導電型の第2半導体層を有する1本または複数本の半導体ロッドをそれぞれが含む複数のマイクロLED(220)、ならびにマイクロLEDの間に位置する素子分離領域(240)を含むフロントプレーン(200)とを備える。素子分離領域は、第2半導体層に電気的に接続された少なくともひとつの金属プラグ(24)を有する。このデバイスは、第1半導体層に電気的に接続された第1コンタクト電極(31)および金属プラグに接続された第2コンタクト電極(32)を含む中間層(300)と、中間層上に形成されたバックプレーン(400)とを備える。
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