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1. WO2020136759 - SEMICONDUCOR DEVICE

Publication Number WO/2020/136759
Publication Date 02.07.2020
International Application No. PCT/JP2018/047844
International Filing Date 26.12.2018
IPC
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H01L 25/07 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 25/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/73265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73251on different surfaces
73265Layer and wire connectors
H01L 2224/8592
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
85using a wire connector
85909Post-treatment of the connector or wire bonding area
8592Applying permanent coating, e.g. protective coating
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
H01L 23/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
Applicants
  • 日産自動車株式会社 NISSAN MOTOR CO., LTD. [JP]/[JP]
Inventors
  • 佐藤 弘 SATO Hiroshi
  • 村上 善則 MURAKAMI Yoshinori
  • 谷澤 秀和 TANISAWA Hidekazu
  • 佐藤 伸二 SATO Shinji
  • 加藤 史樹 KATO Fumiki
  • 御田村 和宏 MITAMURA Kazuhiro
  • 高橋 佑衣 TAKAHASHI Yui
Agents
  • 三好 秀和 MIYOSHI Hidekazu
  • 高橋 俊一 TAKAHASHI Shunichi
  • 伊藤 正和 ITO Masakazu
  • 高松 俊雄 TAKAMATSU Toshio
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN)
This semiconductor device is provided with: a semiconductor chip (1) which is internally provided with a pn junction (13); an opaque sealing resin (30) which covers the surface of the semiconductor chip (1); and functional regions (15, 20) which are arranged between the semiconductor chip (1) and the sealing resin (30) so as to inhibit light having a specific wavelength that deteriorates the sealing resin (30) from reaching the sealing resin (30), said light being generated when a forward current flows through the pn junction (13).
(FR)
Ce dispositif à semi-conducteur est pourvu : d'une puce semi-conductrice (1) qui est pourvue intérieurement d'une jonction pn (13) ; d'une résine d'étanchéité opaque (30) qui recouvre la surface de la puce semi-conductrice (1) ; et de régions fonctionnelles (15, 20) qui sont disposées entre la puce semi-conductrice (1) et la résine d'étanchéité (30) de manière à empêcher la lumière ayant une longueur d'onde spécifique qui détériore la résine d'étanchéité (30) d'atteindre la résine d'étanchéité (30), ladite lumière étant générée lorsqu'un courant direct circule à travers la jonction pn (13).
(JA)
半導体装置は、pn接合(13)が内部に形成された半導体チップ(1)と、半導体チップ(1)の表面を覆う不透明な封止樹脂(30)と、半導体チップ(1)と封止樹脂(30)の間に配置され、pn接合(13)に順方向電流が流れることによって発生する封止樹脂(30)を劣化させる特定の波長を有する光が、封止樹脂(30)に到達することを抑制する機能領域(15)、(20)とを備える。
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