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1. WO2020136653 - TOUGHENED SEMICONDUCTOR SUBSTRATES, DEVICES PRODUCED WITH TOUGHENED SEMICONDUCTOR SUBSTRATES, AND METHODS OF PRODUCING SAME

Publication Number WO/2020/136653
Publication Date 02.07.2020
International Application No. PCT/IL2019/051416
International Filing Date 26.12.2019
IPC
H01L 31/0475 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
0475PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H01L 31/05 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/048 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
048Encapsulation of modules
H02S 30/20 2014.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC MODULES
30Structural details of PV modules other than those related to light conversion
20Collapsible or foldable PV modules
CPC
H01L 27/142
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
142Energy conversion devices
H01L 31/035281
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
035281Shape of the body
H01L 31/03926
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
03926comprising a flexible substrate
H01L 31/042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
H01L 31/0543
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
0543comprising light concentrating means of the refractive type, e.g. lenses
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants
  • SOLARPAINT LTD. [IL]/[IL]
Inventors
  • MAIMON, Eran
  • ALBALAK, Ramon Joseph
  • ROZENBERG, Oded
  • WESTREICH, Esther
Agents
  • GILLIS, Sally
Priority Data
16/362,66524.03.2019US
62/785,28227.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TOUGHENED SEMICONDUCTOR SUBSTRATES, DEVICES PRODUCED WITH TOUGHENED SEMICONDUCTOR SUBSTRATES, AND METHODS OF PRODUCING SAME
(FR) SUBSTRATS SEMI-CONDUCTEURS RENFORCÉS, DISPOSITIFS PRODUITS AVEC DES SUBSTRATS SEMI-CONDUCTEURS RENFORCÉS ET LEURS PROCÉDÉS DE PRODUCTION
Abstract
(EN)
An apparatus includes a segmented Photovoltaic (PV) cell array, having a plurality of micro PV cells. The PV cell array includes one of: (I) a single wafer that is segmented via craters, (II) a portion of a single wafer that is segmented via craters, (III) a set inter-connected wafers that are segmented via craters. The wafer is one of: (i) a composite metallized wafer having an underlying metallization layer, wherein each crater penetrates an entirety of the non-metalized layers of the wafer but does not penetrate the underlying metallization layer; (ii) a semiconductor wafer, wherein each crater penetrates into not more than 99 percent of an entire depth of the semiconductor wafer. Each crater creates a physical recess separation between two neighboring micro PV cells, which are still inter-connected to each other but only across some and not all of their height. The micro PV cells are connected to each other, mechanically and electrically.
(FR)
Un appareil comprend un réseau de cellules photovoltaïques segmentées, ayant une pluralité de microcellules photovoltaïques. Le réseau de cellules photovoltaïques comprend l'un des éléments suivants : (I) une tranche unique qui est segmentée par des cratères, (II) une partie d'une tranche unique qui est segmentée par des cratères, (III) un ensemble de tranches interconnectées qui sont segmentées par des cratères. La tranche est l'un des éléments suivants : (i) une tranche métallisée composite ayant une couche de métallisation sous-jacente, chaque cratère pénétrant dans la totalité des couches non métallisées de la tranche mais ne pénétrant pas dans la couche de métallisation sous-jacente; (ii) une tranche de semi-conducteur, chaque cratère pénétrant dans au plus 99 pour cent de la profondeur totale de la tranche de semi-conducteur. Chaque cratère crée une séparation d'évidement physique entre deux microcellules photovoltaïques voisines, qui sont encore interconnectées l'une à l'autre mais seulement à travers une partie et non la totalité de leur hauteur. Les microcellules photovoltaïques sont connectées les unes aux autres mécaniquement et électriquement.
Also published as
Latest bibliographic data on file with the International Bureau