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1. WO2020136347 - DOPED SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING SAME AND USES THEREOF

Publication Number WO/2020/136347
Publication Date 02.07.2020
International Application No. PCT/FR2019/053287
International Filing Date 23.12.2019
IPC
C01B 25/08 2006.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
25Phosphorus; Compounds thereof
08Other phosphides
C09K 11/70 2006.1
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
11Luminescent, e.g. electroluminescent, chemiluminescent, materials
08containing inorganic luminescent materials
70containing phosphorus
H01L 29/207 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
207further characterised by the doping material
C30B 29/40 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds
CPC
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
C01B 25/088
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
25Phosphorus; Compounds thereof
08Other phosphides
088containing plural metal
C09K 11/70
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
11Luminescent, e.g. electroluminescent, chemiluminescent materials
08containing inorganic luminescent materials
70containing phosphorus
C30B 29/40
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C30B 7/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
14the crystallising materials being formed by chemical reactions in the solution
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR]
Inventors
  • AKDAS, Tugce
  • REISS, Peter
Agents
  • AUGARDE, Eric
Priority Data
187417126.12.2018FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) DOPED SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING SAME AND USES THEREOF
(FR) NANOCRISTAUX DE SEMI-CONDUCTEURS DOPÉS, LEUR PROCÉDÉ DE PRÉPARATION ET LEURS UTILISATIONS
Abstract
(EN)
The present invention concerns a set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the -III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state. The present invention also relates to the method for preparing same and to the various uses thereof.
(FR)
La présente invention concerne un ensemble de nanocristaux comprenant un semi-conducteur comprenant A représentant un métal ou métalloïde à l'état d'oxydation +III et B représentant un élément à l'état d'oxydation -III, lesdits nanocristaux étant dopés, en moyenne par nanocristal, par un atome de C choisi parmi les métaux de transition à l'état d'oxydation +I ou +II. La présente invention concerne également son procédé de préparation et ses différentes utilisations.
Also published as
EP2019850730
Latest bibliographic data on file with the International Bureau