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1. WO2020136267 - ELECTRONIC DEVICE, DIGITAL PORT, ANALOG COMPONENT, AND METHOD FOR GENERATING A VOLTAGE

Publication Number WO/2020/136267
Publication Date 02.07.2020
International Application No. PCT/EP2019/087111
International Filing Date 27.12.2019
IPC
H01L 43/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H03K 19/18 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
02using specified components
18using galvano-magnetic devices, e.g. Hall-effect devices
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 29/78391
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
78391the gate comprising a layer which is used for its ferroelectric properties
H01L 43/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H03K 19/18
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output
02using specified components
18using galvano-magnetic devices, e.g. Hall-effect devices
Applicants
  • THALES [FR]/[FR]
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR]/[FR]
  • COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES [FR]/[FR]
Inventors
  • BIBES, Manuel
  • VILA, Laurent
  • ATTANÉ, Jean-Philippe
  • NOËL, Paul
  • CASTRO VAZ, Diogo
Agents
  • BLOT, Philippe
  • HABASQUE, Etienne
  • DOMENEGO, Bertrand
  • HOLTZ, Béatrice
  • COLOMBIE, Damien
  • NEYRET, Daniel
Priority Data
187431928.12.2018FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) ELECTRONIC DEVICE, DIGITAL PORT, ANALOG COMPONENT, AND METHOD FOR GENERATING A VOLTAGE
(FR) DISPOSITIF ÉLECTRONIQUE, PORTE NUMÉRIQUE, COMPOSANT ANALOGIQUE ET PROCÉDÉ DE GÉNÉRATION D'UNE TENSION
Abstract
(EN)
The present invention relates to an electronic device (10), comprising an input (12) and an output (14), the device (10) generating an output voltage when the input of the device (10) is supplied, the device (10) comprising: - a conversion unit (16) converting a spin current into a charging current having an amplitude and a sign, - a spin current application unit (20) applying a spin current to the conversion unit (16), - a ferroelectric layer (22) which has a ferroelectric polarisation and is arranged such that the ferroelectric polarisation controls the amplitude and/or the sign of the charging current, and - an electric field application unit (24) suitable for applying an electric field to the ferroelectric layer (22) to control the ferroelectric polarisation.
(FR)
La présente invention se rapporte à un dispositif électronique (10), comportant une entrée (12) et une sortie (14), le dispositif (10) générant une tension en sortie lorsque le dispositif (10) est alimenté en entrée, le dispositif (10) comprenant: - une unité de conversion (16) convertissant un courant de spin en un courant de charge présentant une amplitude et un signe, - une unité d'application de courant de spin (20) appliquant un courant de spin à l'unité de conversion (16), - une couche ferroélectrique (22) présentant une polarisation ferroélectrique et étant agencée pour que la polarisation ferroélectrique contrôle l'amplitude et/ou le signe du courant de charge, et - une unité d'application d'un champ électrique (24) propre à appliquer un champ électrique sur la couche ferroélectrique (22) pour contrôler la polarisation ferroélectrique.
Also published as
Latest bibliographic data on file with the International Bureau