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1. WO2020136040 - TWO STEP PHOSPHOR DEPOSITION TO MAKE A MATRIX ARRAY

Publication Number WO/2020/136040
Publication Date 02.07.2020
International Application No. PCT/EP2019/085595
International Filing Date 17.12.2019
IPC
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01L 33/60 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
H01L 25/075 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
CPC
H01L 25/075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 33/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01L 33/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
Applicants
  • LUMILEDS HOLDING B.V. [NL]/[NL]
Inventors
  • BOHMER, Marcel, Rene
  • HEUTS, Jacques
  • SHIMIZU, Ken
  • SCHMIDT, Peter, Josef
Agents
  • TER HEEGDE, Paul
Priority Data
16/232,88426.12.2018US
19154680.331.01.2019EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TWO STEP PHOSPHOR DEPOSITION TO MAKE A MATRIX ARRAY
(FR) DÉPÔT DE LUMINOPHORE EN DEUX ÉTAPES POUR FABRIQUER UN GROUPEMENT MATRICIEL
Abstract
(EN)
A method of fabricating closely spaced pcLEDs (100) arranged in a matrix array (200) of perpendicular rows and columns comprises an initial phosphor deposition step in which phosphor (803, 905) is deposited at alternating locations (pixels) in the matrix array in a checkerboard pattern, so that the locations (504) in the array at which phosphor (803, 905) is deposited are not adjacent to each other. In a subsequent phosphor deposition step phosphor is deposited at the alternating locations at which phosphor was not deposited in the first deposition step. In between the two phosphor deposition steps, reflective or scattering structures (606) may be fabricated on sidewalls of the phosphor pixels to optically isolate pcLEDs in the resulting array from each other
(FR)
L'invention porte sur un procédé de fabrication de pcLED (100) étroitement espacées agencées en un groupement matriciel (200) de rangées et de colonnes perpendiculaires, qui comprend une étape de dépôt de luminophore initiale à laquelle un luminophore (803, 905) est déposé à des emplacements (pixels) alternés dans le groupement matriciel selon un motif en damier, de telle sorte que les emplacements (504) dans le groupement auxquels le luminophore (803, 905) est déposé ne soient pas adjacents l'un à l'autre. À une étape de dépôt de luminophore subséquente, un luminophore est déposé aux emplacements alternés auxquels le luminophore n'a pas été déposé à la première étape de dépôt. Entre les deux étapes de dépôt de luminophore, des structures de réflexion ou de diffusion (606) peuvent être fabriquées sur des parois latérales des pixels de luminophore pour isoler optiquement les pcLED l'une de l'autre dans le groupement ainsi obtenu.
Also published as
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