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1. WO2020135770 - HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREFOR

Publication Number WO/2020/135770
Publication Date 02.07.2020
International Application No. PCT/CN2019/129379
International Filing Date 27.12.2019
IPC
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/47 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
47Schottky barrier electrodes
H01L 21/335 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
CPC
H01L 21/28581
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28575on semiconductor bodies comprising AIIIBV compounds
28581Deposition of Schottky electrodes
H01L 21/28587
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28575on semiconductor bodies comprising AIIIBV compounds
28587characterised by the sectional shape, e.g. T, inverted T
H01L 21/32136
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32135by vapour etching only
32136using plasmas
H01L 21/32139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32139using masks
H01L 23/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3157Partial encapsulation or coating
3171the coating being directly applied to the semiconductor body, e.g. passivation layer
H01L 29/0657
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
Applicants
  • 英诺赛科(珠海)科技有限公司 INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 张铭宏 CHANG, Minghong
  • 黄敬源 WONG, Kingyuen
  • 邱汉钦 CHIU, Han-Chin
  • 廖航 LIAO, Hang
Agents
  • 深圳宜保知识产权代理事务所(普通合伙) IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
201811639089.029.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREFOR
(FR) TRANSISTOR À HAUTE MOBILITÉ D'ÉLECTRONS ET SON PROCÉDÉ DE FABRICATION
(ZH) 高电子迁移率晶体管及其制造方法
Abstract
(EN)
The present application relates to a high electron mobility transistor and a fabrication method therefor. The high electron mobility transistor may comprise: a substrate; a channel layer disposed on the substrate; a barrier layer disposed on the channel layer; a semiconductor gate disposed on the barrier layer; a metal gate disposed on the semiconductor gate, the metal gate having a trapezoidal cross-sectional shape; and a passivation layer which directly comes into contact with the metal gate. A first surface of the metal gate makes contact with a first surface of the semiconductor gate, and an edge of the first surface of the metal gate is located at an inner part of an edge of the first surface of the semiconductor gate.
(FR)
La présente invention porte sur un transistor à haute mobilité d'électrons et sur son procédé de fabrication. Le transistor à haute mobilité d'électrons peut comprendre : un substrat; une couche de canal disposée sur le substrat; une couche de barrière disposée sur la couche de canal; une grille semi-conductrice disposée sur la couche de barrière; une grille de métal disposée sur la grille semi-conductrice, la grille de métal ayant une forme de section transversale trapézoïdale; et une couche de passivation qui entre directement en contact avec la grille de métal. Une première surface de la grille de métal établit le contact avec une première surface de la grille semi-conductrice, et un bord de la première surface de la grille de métal est situé au niveau d'une partie intérieure d'un bord de la première surface de la grille semi-conductrice.
(ZH)
本申请涉及了一种高电子迁移率晶体管及其制造方法。高电子迁移率晶体管可包含:衬底;设置在所述衬底上的沟道层;设置在所述沟道层上的势垒层;设置在所述势垒层上的半导体栅极;设置在所述半导体栅极上的金属栅极,所述金属栅极具有梯形的剖面形状;以及钝化层,其直接接触所述金属栅极。所述金属栅极的第一表面与所述半导体栅极的第一表面接触,且所述金属栅极的第一表面的边缘位于所述半导体栅极的第一表面的边缘内部。
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