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1. WO2020135749 - LASER ANNEALING DEVICE FOR SIC SUBSTRATE

Publication Number WO/2020/135749
Publication Date 02.07.2020
International Application No. PCT/CN2019/129292
International Filing Date 27.12.2019
IPC
H01L 21/268 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
B23K 26/06 2014.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06Shaping the laser beam, e.g. by masks or multi-focusing
CPC
B23K 26/06
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06Shaping the laser beam, e.g. by masks or multi-focusing
H01L 21/268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
Applicants
  • 上海微电子装备(集团)股份有限公司 SHANGHAI MICRO ELECTRONICS EQUIPMENT (GROUP) CO., LTD. [CN]/[CN]
Inventors
  • 周炯 ZHOU, Jiong
  • 周伟 ZHOU, Wei
Agents
  • 北京品源专利代理有限公司 BEYOND ATTORNEYS AT LAW
Priority Data
201811627629.328.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) LASER ANNEALING DEVICE FOR SIC SUBSTRATE
(FR) DISPOSITIF DE RECUIT AU LASER POUR SUBSTRAT DE SIC
(ZH) SiC基底的激光退火装置
Abstract
(EN)
Disclosed is a laser annealing device for an SiC substrate. The device comprises: a laser emission unit configured to provide a laser light source required for annealing; a laser shaping unit configured to shape a laser emitted by the laser emission unit into a rectangular light spot, energy distribution of the rectangular light spot in a scanning direction being trapezoidal; a scanning galvanometer unit configured to control a laser beam from the laser shaping unit such that the laser beam carries out scanning, according to a pre-set scanning mode, on the surface of an SiC substrate to be annealed; a workpiece bearing mechanism configured to bear the SiC substrate to be annealed; and a main controller electrically connected to the laser emission unit, the laser shaping unit, the scanning galvanometer unit and the workpiece bearing mechanism, respectively.
(FR)
Dispositif de recuit au laser pour un substrat de SiC. Le dispositif comprend : une unité d'émission laser conçue pour fournir une source de lumière laser requise pour le recuit ; une unité de mise en forme de laser conçue pour mettre en forme un laser émis par l'unité d'émission laser en un point lumineux rectangulaire, la distribution d'énergie du point lumineux rectangulaire dans une direction de balayage étant trapézoïdale ; une unité de galvanomètre à balayage conçue pour commander un faisceau laser provenant de l'unité de mise en forme de laser de telle sorte que le faisceau laser effectue un balayage, selon un mode de balayage prédéfini, sur la surface d'un substrat de SiC à recuire ; un mécanisme de support de pièce à travailler conçu pour supporter le substrat de SiC à recuire ; et un dispositif de commande principal connecté électriquement à l'unité d'émission laser, à l'unité de mise en forme de laser, à l'unité de galvanomètre à balayage et au mécanisme de support de pièce à travailler, respectivement.
(ZH)
一种SiC基底的激光退火装置,包括:激光发射单元,设置为提供退火所需的激光光源;激光整形单元,设置为将所述激光发射单元发射的激光整形为矩形光斑,所述矩形光斑的扫描向的能量分布呈梯形;扫描振镜单元,设置为控制来自所述激光整形单元的激光光束以使所述激光光束在待退火的SiC基底表面按预设扫描方式扫描;工件承载机构,设置为承载待退火的SiC基底;及主控制器,分别与所述激光发射单元、所述激光整形单元、所述扫描振镜单元和所述工件承载机构电连接。
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