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1. WO2020135464 - TRENCH-TYPE VERTICAL DOUBLE DIFFUSION METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

Publication Number WO/2020/135464
Publication Date 02.07.2020
International Application No. PCT/CN2019/128130
International Filing Date 25.12.2019
IPC
H01L 27/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 27/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
36characterised by the concentration or distribution of impurities ; in the bulk material
H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
H01L 29/7813
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7813with trench gate electrode, e.g. UMOS transistors
Applicants
  • 无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN]/[CN]
Inventors
  • 方冬 FANG, Dong
  • 肖魁 XIAO, Kui
  • 卞铮 BIAN, Zheng
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201811592439.225.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TRENCH-TYPE VERTICAL DOUBLE DIFFUSION METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP À STRUCTURE MÉTAL-OXYDE-SEMICONDUCTEUR À DOUBLE DIFFUSION VERTICALE DU TYPE TRANCHÉE
(ZH) 沟槽型垂直双扩散金属氧化物半导体场效应晶体管
Abstract
(EN)
A trench-type vertical double diffusion metal oxide semiconductor (VDMOS), comprising a semiconductor substrate (100), a body region (121) formed in the substrate (100), and a source region (122) formed in the body region. Each trench gate structure (200) penetrates through the source region (122) and the body region (121) and extends to the substrate (100). A first interlayer dielectric layer (300), a first metal layer, a second interlayer dielectric layer (500), and a second metal layer are sequentially stacked on the source region (122) and each trench gate structure (200). One of the first metal layer and the second metal layer is a gate metal layer (400), and is connected to each gate electrode (230) by means of a contact hole (310) in a gate region, and the other layer serves as a source metal layer (600) and is connected to the body region (121) by means of a contact hole (510) in the source region. The number N of trench gate structures (200) in each cellular structure (Y) located on the same side of the contact hole (510) in the source region is greater than or equal to 2.
(FR)
La présente invention porte sur un semi-conducteur métal-oxyde à double diffusion verticale (VDMOS) du type tranchée, comprenant un substrat semi-conducteur (100), une zone de corps (121) formée dans le substrat (100), et une zone de source (122) formée dans la zone de corps. Chaque structure de grille en tranchée (200) pénètre à travers la zone de source (122) et la zone de corps (121) et s'étend jusqu'au substrat (100). Une première couche diélectrique intercouche (300), une première couche métallique, une seconde couche diélectrique intercouche (500) et une seconde couche métallique sont empilées séquentiellement sur la zone de source (122) et sur chaque structure de grille en tranchée (200). La première ou la seconde couche métallique est une couche métallique de grille (400), et est connectée à chaque électrode grille (230) au moyen d'un trou de contact (310) dans une zone de grille, et l'autre couche sert de couche métallique de source (600) et est connectée à la zone de corps (121) au moyen d'un trou de contact (510) dans la zone de source. Le nombre N de structures de grille en tranchée (200) dans chaque structure cellulaire (Y) située sur le même côté du trou de contact (510) dans la zone source est supérieur ou égal à 2.
(ZH)
沟槽型VDMOS包括半导体基底(100)和形成于基底(100)内的体区(121)以及形成于体区内的源区(122);各沟槽栅结构(200)贯穿源区(122)和体区(121)并延伸至基底(100);在源区(122)上和各沟槽栅结构(200)上依次叠设有第一层间介质层(300)、第一金属层、第二层间介质层(500)和第二金属层;第一金属层和第二金属层中的其中一层为栅极金属层(400)且通过栅区接触孔(310)与各栅极层(230)连接,另一层作为源极金属层(600)且通过源区接触孔(510)与体区(121)连接;各元胞结构(Y)中位于源区接触孔(510)同侧的沟槽栅结构(200)的数量N≥2。
Also published as
Latest bibliographic data on file with the International Bureau