H | ELECTRICITY |
01 | BASIC ELECTRIC ELEMENTS |
L | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR |
29 | Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor |
66 | Types of semiconductor device ; ; Multistep manufacturing processes therefor |
68 | controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched |
76 | Unipolar devices ; , e.g. field effect transistors |
772 | Field effect transistors |
78 | with field effect produced by an insulated gate |
7801 | DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region |
7802 | Vertical DMOS transistors, i.e. VDMOS transistors |
7803 | structurally associated with at least one other device |
7806 | the other device being a Schottky barrier diode |