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1. WO2020135197 - CIRCUIT FOR TESTING DYNAMIC RESISTANCE OF GALLIUM NITRIDE DEVICE

Publication Number WO/2020/135197
Publication Date 02.07.2020
International Application No. PCT/CN2019/126469
International Filing Date 19.12.2019
IPC
G01R 31/26 2014.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
G01R 27/08 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
27Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
08Measuring resistance by measuring both voltage and current
CPC
G01R 27/02
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
27Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
G01R 27/08
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
27Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
08Measuring resistance by measuring both voltage and current
G01R 31/26
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
G01R 31/2637
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
2607Circuits therefor
2637for testing other individual devices
Applicants
  • 东南大学 SOUTHEAST UNIVERSITY [CN]/[CN]
  • 无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN]/[CN]
Inventors
  • 刘斯扬 LIU, Siyang
  • 李胜 LI, Sheng
  • 孙贵鹏 SUN, Guipeng
  • 肖魁 XIAO, Kui
  • 张弛 ZHANG, Chi
  • 吴海波 WU, Haibo
  • 孙伟锋 SUN, Weifeng
  • 陆生礼 LU, Shengli
  • 时龙兴 SHI, Longxing
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201811583665.424.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) CIRCUIT FOR TESTING DYNAMIC RESISTANCE OF GALLIUM NITRIDE DEVICE
(FR) CIRCUIT POUR TESTER LA RÉSISTANCE DYNAMIQUE D'UN DISPOSITIF AU NITRURE DE GALLIUM
(ZH) 一种氮化镓器件动态电阻测试电路
Abstract
(EN)
A circuit for testing dynamic resistance of a gallium nitride device Q1, comprising a gate drive module (3) for driving a device to be tested, a clamp circuit (1), and a load module (2). One end of the load module (2) is connected to a power supply DC. The clamp circuit (1) comprises a voltage stabilizing module (12) and a high-voltage diode D1. An anode of the high-voltage diode D1 is connected to one end of the voltage stabilizing module (12). A cathode of the high-voltage diode D1 and the other end of the load module (2) are connected to a drain electrode of a gallium nitride device Q1 to be tested. The other end of the voltage stabilizing module (12) is connected to the power ground and is used for connecting to a source electrode of said gallium nitride device Q1. The clamp circuit (1) further comprises a constant current module (11). A constant current output by the constant current module (11) flows to said gallium nitride device Q1 by means of the high-voltage diode D1. A gate control signal of said gallium nitride device Q1 is provided by the gate drive module (3). When said gallium nitride device Q1 is turned on, a current flowing through the high-voltage diode D1 is provided by the constant current module (11). When said gallium nitride device Q1 is turned off, a voltage tested at a voltage test point is stabilized by the voltage stabilizing module (12).
(FR)
La présente invention concerne un circuit permettant de tester la résistance dynamique d'un dispositif au nitrure de gallium Q1, le circuit comprenant un module d'excitation de grille (3) servant à exciter un dispositif à tester, un circuit de verrouillage (1) et un module de charge (2). Une extrémité du module de charge (2) est connectée à une alimentation en CC. Le circuit de verrouillage (1) comprend un module de stabilisation de tension (12) et une diode haute tension D1. Une anode de la diode haute tension D1 est connectée à une extrémité du module de stabilisation de tension (12). Une cathode de la diode haute tension D1 et l'autre extrémité du module de charge (2) sont connectées à une électrode déversoir d'un dispositif au nitrure de gallium Q1 à tester. L'autre extrémité du module de stabilisation de tension (12) est connectée à la masse d'alimentation et sert à se connecter à une électrode source dudit dispositif au nitrure de gallium Q1. Le circuit de verrouillage (1) comprend en outre un module de courant constant (11). Une sortie de courant constant par le module de courant constant (11) s'écoule vers ledit dispositif au nitrure de gallium Q1 au moyen de la diode haute tension D1. Un signal de commande de grille dudit dispositif au nitrure de gallium Q1 est fourni par le module d'excitation de grille (3). Lorsque ledit dispositif au nitrure de gallium Q1 est activé, un courant circulant à travers la diode haute tension D1 est fourni par le module de courant constant (11). Lorsque ledit dispositif au nitrure de gallium Q1 est désactivé, une tension testée à un point de test de tension est stabilisée par le module de stabilisation de tension (12).
(ZH)
一种氮化镓器件Q1动态电阻测试电路,包括用于驱动待测器件的栅驱动模块(3)、钳位电路(1)和负载模块(2),负载模块(2)的一端连接电源DC,钳位电路(1)包括稳压模块(12)和高压二极管D1,高压二极管D1的阳极与稳压模块(12)一端连接,高压二极管D1的阴极与负载模块(2)的另一端连接被测氮化镓器件Q1的漏电极,稳压模块(12)的另一端接电源地并用于连接被测氮化镓器件Q1的源电极,钳位电路(1)还包括恒流模块(11),恒流模块(11)输出的恒定电流经过高压二极管D1流向被测氮化镓器件Q1。被测氮化镓器件Q1的栅控信号由栅驱动模块(3)提供,被测氮化镓器件Q1导通时流过高压二极管D1的电流由恒流模块(11)提供,被测氮化镓器件Q1关断时电压测试点测得的电压由稳压模块(12)稳压。
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