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1. WO2020135168 - CHEMICO-MECHANICAL POLISHING SOLUTION AND USE THEREOF

Publication Number WO/2020/135168
Publication Date 02.07.2020
International Application No. PCT/CN2019/126141
International Filing Date 18.12.2019
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C23F 3/06 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
3Brightening metals by chemical means
04Heavy metals
06with acidic solutions
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
C23F 3/06
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
3Brightening metals by chemical means
04Heavy metals
06with acidic solutions
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/30625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Applicants
  • 安集微电子(上海)有限公司 ANJI MICROELECTRONICS (SHANGHAI) CO., LTD [CN]/[CN]
Inventors
  • 周文婷 ZHOU, Wenting
  • 荆建芬 JING, Jianfen
  • 姚颖 YAO, Ying
  • 蔡鑫元 CAI, Xinyuan
  • 马健 MA, Jian
  • 李恒 LI, Heng
Agents
  • 北京大成律师事务所 BEIJING DACHENG LAW OFFICES, LLP
Priority Data
201811635542.029.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) CHEMICO-MECHANICAL POLISHING SOLUTION AND USE THEREOF
(FR) SOLUTION CHIMICO-MÉCANIQUE DE POLISSAGE ET UTILISATION ASSOCIÉE
(ZH) 一种化学机械抛光液及其应用
Abstract
(EN)
Disclosed is a chemico-mechanical polishing solution, comprising silica abrasion particles, a nitrogen-containing heterocyclic compound comprising one or more carboxyl groups, and an ethoxylated butoxylated alkyl alcohol. Also disclosed is a use of the chemico-mechanical polishing solution in the polishing of silica, polysilicon, and silicon nitride. The polishing solution of the present invention has a polishing rate for silicon nitride that is far higher than that for silica and polysilicon, and thus finds good use in the chemico-mechanical polishing of a silica/polysilicon stop layer, permitting a good control of the amount of removal of oxides and polysilicon on a substrate surface during the polishing process.
(FR)
L'invention concerne une solution chimico-mécanique de polissage, comprenant des particules abrasives en silice, un composé hétérocyclique azoté comprenant un ou plusieurs groupes carboxyle, et un alcool alkylique éthoxylé butoxylé. L'invention concerne également une utilisation de la solution chimico-mécanique de polissage permettant le polissage de silice, de polysilicium et de nitrure de silicium. La solution de polissage de la présente invention présente une vitesse de polissage du nitrure de silicium qui est bien supérieure à celle de la silice et du polysilicium, et ainsi trouve une bonne utilisation dans le polissage chimico-mécanique d'une couche d'arrêt en silice/polysilicium, en permettant une bonne régulation de l'ampleur du retrait des oxydes et du polysilicium sur une surface de substrat pendant l'opération de polissage.
(ZH)
本发明提供了一种化学机械抛光液,包括二氧化硅研磨颗粒,含一个或多个羧基的含氮杂环化合物,乙氧基化丁氧基化的烷基醇。本发明的还提供了一种上述的化学机械抛光液二氧化硅、多晶硅、氮化硅的抛光中的应用。本发明的抛光液对氮化硅的抛光速率远远大于对二氧化硅、多晶硅的抛光速率,从而能够很好地应用于二氧化硅/多晶硅为停止层的化学机械抛光之中,可以较好地控制抛光过程中基板表面上的氧化物及多晶硅的去除量。
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Latest bibliographic data on file with the International Bureau