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1. WO2020135138 - TRENCH GATE IGBT AND DEVICE

Publication Number WO/2020/135138
Publication Date 02.07.2020
International Application No. PCT/CN2019/125812
International Filing Date 17.12.2019
IPC
H01L 29/739 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
CPC
H01L 29/423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/4236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42356Disposition, e.g. buried gate electrode
4236within a trench, e.g. trench gate electrode, groove gate electrode
H01L 29/42368
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42364characterised by the insulating layer, e.g. thickness or uniformity
42368the thickness being non-uniform
H01L 29/739
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
H01L 29/7397
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
7395Vertical transistors, e.g. vertical IGBT
7396with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
7397and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Applicants
  • 广东美的白色家电技术创新中心有限公司 GUANGDONG MIDEA WHITE HOME APPLIANCE TECHNOLOGY INNOVATION CENTER CO. LTD. [CN]/[CN]
  • 美的集团股份有限公司 MIDEA GROUP CO., LTD. [CN]/[CN]
Inventors
  • 兰昊 LAN, Hao
  • 冯宇翔 FENG, Yuxiang
Agents
  • 北京路浩知识产权代理有限公司 CN-KNOWHOW INTELLECTUAL PROPERTY AGENT LIMITED
Priority Data
201811589486.125.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TRENCH GATE IGBT AND DEVICE
(FR) IGBT À GRILLE EN TRANCHÉE ET DISPOSITIF
(ZH) 沟槽栅IGBT及装置
Abstract
(EN)
Provided are a trench gate IGBT and a device. The trench gate IGBT comprises an emitting electrode, a p well region, a gate, a gate oxide layer, a drift region and a back collecting electrode. The gate is located in a trench; the gate is isolated from the emitting electrode, the p well region and the drift region by the gate oxide layer; the trench is disposed inside a substrate; and a plurality of recesses are provided at the boundary of the trench and the drift region. During switching on and off the trench gate IGBT, a side surface of the trench and an interface of the drift region are provided with a plurality of recess gate oxide layers, so that electron charges can be restrained and accumulated, thereby improving the conduction capacity, solving the technical problem of excessively high power consumption of switching on and off the trench gate IGBT in the prior art, and achieving the beneficial effect of reducing the power consumption of switching on and off the trench gate IGBT.
(FR)
La présente invention concerne un IGBT à grille en tranchée et un dispositif. L'IGBT à grille en tranchée comprend une électrode émettrice, une région de puits p, une grille, une couche d'oxyde de grille, une région de dérive et une électrode de collecte arrière. La grille est située dans une tranchée ; la grille est isolée de l'électrode émettrice, de la région de puits p et de la région de dérive par la couche d'oxyde de grille ; la tranchée est placée à l'intérieur d'un substrat ; et une pluralité d'évidements sont placés au niveau de la limite de la tranchée et de la région de dérive. Pendant la mise sous tension et hors tension de l'IGBT à grille en tranchée, une surface latérale de la tranchée et une interface de la région de dérive sont dotées d'une pluralité de couches d'oxyde de grille d'évidement, de telle sorte que des charges d'électrons peuvent être retenues et accumulées, ce qui permet d'améliorer la capacité de conduction, de résoudre le problème technique d'une consommation d'énergie excessive lors de la mise sous tension et hors tension de l'IGBT à grille en tranchée dans l'état de la technique, et d'obtenir l'effet bénéfique de réduction de la consommation d'énergie lors de la mise sous tension et hors tension de l'IGBT à grille en tranchée.
(ZH)
一种沟槽栅IGBT及装置,该沟槽栅IGBT包括发射极、p阱区、栅极、栅极氧化层、漂移区和背部集电极,该栅极位于沟槽内,栅极与发射极、p阱区和漂移区之间由栅极氧化层隔离,该沟槽设置在衬底内部,该沟槽与漂移区的边界具有多个凹陷。在沟槽栅IGBT开关过程中,该沟槽的侧面与漂移区的界面上具有多个凹陷栅极氧化层,可以束缚和积累电子电荷,从而提高导通能力,解决现有技术中沟槽栅IGBT的开关功耗过高的技术问题,以起到减小沟槽栅IGBT的开关功耗的有益效果。
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