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1. WO2020134922 - BONDING CAVITY STRUCTURE AND BONDING METHOD

Publication Number WO/2020/134922
Publication Date 02.07.2020
International Application No. PCT/CN2019/122975
International Filing Date 04.12.2019
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
CPC
H01L 21/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
Applicants
  • 上海集成电路研发中心有限公司 SHANGHAI IC R & D CENTER CO., LTD. [CN]/[CN]
Inventors
  • 厉心宇 LI, Xinyu
Agents
  • 上海天辰知识产权代理事务所(特殊普通合伙) SHANGHAI TIANCHEN INTELLECTUAL PROPERTY AGENCY
Priority Data
201811618228.128.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) BONDING CAVITY STRUCTURE AND BONDING METHOD
(FR) STRUCTURE DE CAVITÉ DE LIAISON, ET PROCÉDÉ DE LIAISON
(ZH) 一种键合腔体结构及键合方法
Abstract
(EN)
Disclosed are a bonding cavity structure and a bonding method. The bonding cavity comprises an upper bearing platform, a lower bearing platform, and an airflow forming mechanism. The airflow forming mechanism comprises a plurality of open-close integrated arms. A plurality of air nozzles are provided on the integrated arm facing a wafer bonding surface. The air nozzle is switched to a gas nozzle or a vacuum suction nozzle. When each integrated arm is closed, a closed environment is formed with the bearing platform. By setting each of the air nozzles located on one side of the wafer as a gas nozzle, parallel blowing is carried out in the wafer bonding surface. By setting each of the air nozzles on the other side of the wafer as a vacuum suction nozzle, the gas blown from the gas nozzle at the corresponding position is sucked. A Bernoulli effect low pressure is generated by forming a high speed airflow between two wafers, so that the wafer is not only pushed by the back surface, but also subjected to a uniform low-pressure pull force between the bonding surfaces, which can enhance the uniformity of the force exerted in the bonding process, and moreover, the influence of particles in the environment on the bonding surfaces is reduced.
(FR)
L’invention concerne une structure de cavité de liaison et un procédé de liaison. La cavité de liaison comprend une plateforme de support supérieure, une plateforme de support inférieure et un mécanisme de formation d'écoulement d'air. Le mécanisme de formation d'écoulement d'air comprend une pluralité de bras intégrés d'ouverture-fermeture. Une pluralité de buses d'air sont disposées sur le bras intégré faisant face à une surface de liaison de tranche. La buse d'air est commutée vers une buse de gaz ou une buse d'aspiration sous vide. Lorsque chaque bras intégré est fermé, un environnement fermé est formé avec la plateforme de support. En réglant chacune des buses d'air situées sur un côté de la tranche comme buse de gaz, un soufflage parallèle est effectué dans la surface de liaison de tranche. En réglant chacune des buses d'air sur l'autre côté de la tranche comme buse d'aspiration sous vide, le gaz soufflé à partir de la buse à gaz au niveau de la position correspondante est aspiré. Une basse pression à effet Bernoulli est générée par la formation d'un écoulement d'air à grande vitesse entre deux tranches, de telle sorte que la tranche ne soit pas seulement poussée par la surface arrière, mais également soumise à une force de traction uniforme à basse pression entre les surfaces de liaison, laquelle peut améliorer l'uniformité de la force exercée dans le processus de liaison, et en outre, l'influence de particules dans l'environnement sur les surfaces de liaison est réduite.
(ZH)
本发明公开了一种键合腔体结构及键合方法,键合腔体包括上承载台和下承载台,气流形成机构,气流形成机构包括多个开合式集成手臂,集成手臂上朝向晶圆键合面设有多个气嘴,气嘴经切换时成为气体喷嘴或真空吸嘴,当各集成手臂合拢时与承载台之间形成密闭环境,通过将位于晶圆一侧的各气嘴设定为气体喷嘴,向晶圆键合面中平行吹气,将位于晶圆另一侧的各气嘴设定为真空吸嘴,吸取由对应位置气体喷嘴吹来的气体,在两片晶圆间形成高速气流,产生伯努利效应低压,使得晶圆不仅受到来自背面的推力,而且在键合面之间也受到均匀的低压所产生的拉力作用,可增强键合过程中的受力均匀性,同时可以减少环境内颗粒对键合面造成的影响。
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