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1. WO2020134605 - INTEGRATED STRUCTURE OF CRYSTAL RESONATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR

Publication Number WO/2020/134605
Publication Date 02.07.2020
International Application No. PCT/CN2019/115658
International Filing Date 05.11.2019
IPC
H03H 9/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H03H 9/17 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
CPC
H03H 3/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 9/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
H03H 9/17
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
H03H 9/205
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
205having multiple resonators
Applicants
  • 中芯集成电路(宁波)有限公司上海分公司 NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH) [CN]/[CN]
Inventors
  • 秦晓珊 QIN, Xiaoshan
Agents
  • 上海思捷知识产权代理有限公司 SHANGHAI SAVVY IP AGENCY CO., LTD.
Priority Data
201811647884.429.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) INTEGRATED STRUCTURE OF CRYSTAL RESONATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR
(FR) STRUCTURE INTÉGRÉE DU RÉSONATEUR À QUARTZ ET CIRCUIT DE COMMANDE ET SON PROCÉDÉ D'INTÉGRATION
(ZH) 晶体谐振器与控制电路的集成结构及其集成方法
Abstract
(EN)
An integrated structure of a crystal resonator and a control circuit and an integration method therefor. Lower cavities (120) are formed in a device wafer (100) on which a control circuit (110) is formed, piezoelectric resonator sheets (200) are formed on the device wafer (100), and a capping layer (420) is formed by further utilizing a semiconductor planar process so as to cap the piezoelectric resonator sheets (200) in upper cavities (400) to constitute a crystal resonator. The present crystal resonator has a smaller size, which is helpful for reducing the power consumption thereof, and the crystal resonator is more easily integrated with other semiconductor components, thereby improving the integration of the device.
(FR)
L'invention concerne une structure intégrée d'un résonateur à quartz et un circuit de commande et son procédé d'intégration. Des cavités inférieures (120) sont formées dans une tranche de dispositif (100) sur laquelle est formé un circuit de commande (110), des feuilles de résonateur piézoélectrique (200) sont formées sur la tranche de dispositif (100), et une couche de recouvrement (420) est formée en utilisant en outre un processus planaire semi-conducteur de façon à recouvrir les feuilles de résonateur piézoélectrique (200) dans des cavités supérieures (400) afin de constituer un résonateur à quartz. Le présent résonateur à quartz a une taille plus petite, ce qui est utile pour réduire sa consommation d'énergie, et le résonateur à cristal est plus facilement intégré à d'autres composants semi-conducteurs, ce qui permet d'améliorer l'intégration du dispositif.
(ZH)
一种晶体谐振器与控制电路的集成结构及其集成方法。通过在形成有控制电路(110)的器件晶圆(100)中形成下空腔(120),并将压电谐振片(200)形成在器件晶圆(100)上,以及进一步利用半导体平面工艺形成封盖层(420),以将压电谐振片(200)封盖在上空腔(400)中以构成晶体谐振器。所述的晶体谐振器具备更小的尺寸,有利于降低晶体谐振器的功耗,并所述的晶体谐振器更也易于与其他半导体元器件集成,从而能够提高器件的集成度。
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