Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020134589 - MEMS PACKAGING STRUCTURE AND FABRICATION METHOD THEREFOR

Publication Number WO/2020/134589
Publication Date 02.07.2020
International Application No. PCT/CN2019/115615
International Filing Date 05.11.2019
IPC
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/48 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
B81B 7/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems
CPC
B81B 7/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems; ; Auxiliary parts of microstructural devices or systems
B81B 7/0006
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems; ; Auxiliary parts of microstructural devices or systems
0006Interconnects
B81B 7/007
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems; ; Auxiliary parts of microstructural devices or systems
0032Packages or encapsulation
007Interconnections between the MEMS and external electrical signals
B81B 7/02
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems; ; Auxiliary parts of microstructural devices or systems
02containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 1/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
B81C 1/00269
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00261Processes for packaging MEMS devices
00269Bonding of solid lids or wafers to the substrate
Applicants
  • 中芯集成电路(宁波)有限公司上海分公司 NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH) [CN]/[CN]
Inventors
  • 秦晓珊 QIN, Xiaoshan
Agents
  • 上海思捷知识产权代理有限公司 SHANGHAI SAVVY IP AGENCY CO., LTD.
Priority Data
201811614185.X27.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MEMS PACKAGING STRUCTURE AND FABRICATION METHOD THEREFOR
(FR) STRUCTURE DE MISE SOUS BOÎTIER DE MEMS ET SON PROCÉDÉ DE FABRICATION
(ZH) MEMS封装结构及其制作方法
Abstract
(EN)
A MEMS packaging structure and a fabrication method therefor, the MEMS packaging structure comprising MEMS chips (210, 220) and a device wafer (100). The MEMS chips (210, 220) are disposed on a first surface (100a) of the device wafer. The MEMS chips (210, 220) have closed microcavities (211, 221) and contact pads (212, 222) for connecting an external electrical signal. A control unit and an interconnection structure (300) electrically connected to both the contact pads (212, 222) and the control unit are provided in the device wafer (100). A rewiring layer (400) electrically connected to the interconnection structure (300) is provided at a second surface (100b) of the device wafer. The fabrication method for the MEMS packaging structure comprises disposing the MEMS chips (210, 220) and the rewiring layer (400) at two sides of the device wafer (100) respectively, which helps to reduce the size of the MEMS packaging structure, and a plurality of MEMS chips having the same or different structures and functions may be integrated on the same device wafer.
(FR)
Structure e mise sous boîtier de MEMS et son procédé de fabrication, la structure de mise sous boîtier de MEMS comprenant des puces MEMS (210, 220) et une plaquette (100) de dispositif. Les puces MEMS (210, 220) sont disposées sur une première surface (100a) de la plaquette de dispositif. Les puces MEMS (210, 220) comportent des micro-cavités fermées (211, 221) et des plages de contact (212, 222) pour connecter un signal électrique externe. Une unité de commande et une structure d'interconnexion (300) connectées électriquement aux deux plages de contact (212, 222) et à l'unité de commande sont disposées dans la plaquette (100) de dispositif. Une couche de recâblage (400) électriquement connectée à la structure d'interconnexion (300) est disposée au niveau d'une seconde surface (100b) de la plaquette de dispositif. Le procédé de fabrication de la structure de mise sous boîtier de MEMS consiste à disposer les puces MEMS (210, 220) et la couche de recâblage (400) des deux côtés de la plaquette (100) de dispositif respectivement, ce qui aide à réduire la taille de La structure de mise sous boîtier de MEMS, et une pluralité de puces MEMS ayant les mêmes structures et fonctions ou structures et fonctions différentes peuvent être intégrées sur la même plaquette de dispositif.
(ZH)
一种MEMS封装结构及其制作方法,MEMS封装结构包括MEMS芯片(210,220)及器件晶圆(100),MEMS芯片(210,220)设置于器件晶圆的第一表面(100a),MEMS芯片(210,220)具有封闭的微腔(211,221)和用于连接外部电信号的接触垫(212,222),器件晶圆(100)中设置有控制单元以及与接触垫(212,222)和控制单元均电连接的互连结构(300),在器件晶圆的第二表面(100b)设置有与互连结构(300)电连接的再布线层(400)。MEMS封装结构的制作方法将MEMS芯片(210,220)和再布线层(400)分别设置在器件晶圆(100)的两侧,有利于缩小MEMS封装结构的尺寸,并且同一器件晶圆上可集成多个具有相同或不同的结构和功能的MEMS芯片。
Also published as
Latest bibliographic data on file with the International Bureau