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1. WO2020134248 - QUANTUM DOT LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/134248
Publication Date 02.07.2020
International Application No. PCT/CN2019/108097
International Filing Date 26.09.2019
IPC
H01L 51/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
H01L 51/5265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5262Arrangements for extracting light from the device
5265comprising a resonant cavity structure, e.g. Bragg reflector pair
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 雷卉 LEI, Hui
  • 曹蔚然 CAO, Weiran
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811645978.829.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE FABRICATION
(ZH) 量子点发光二极管及其制备方法
Abstract
(EN)
A quantum dot light emitting diode and a manufacturing method therefor. The quantum dot light emitting diode comprises a bottom electrode, a top electrode, and a quantum dot light emitting layer disposed between the bottom electrode and the top electrode; the quantum dot light emitting diode is a bottom-emitting quantum dot light emitting diode; the surface of the bottom electrode close to the quantum dot light emitting layer is provided with a nanopillar array consisting of multiple nanopillars; in the nanopillar array, the diameter of the nanopillar is λ/(4×n1), and the distance between any two adjacent nanopillars is λ/(4×n2), wherein λ is the center wavelength of output light of the quantum dot light emitting diode, n1 is the refractive index of the material of the nanopillars, n2 is the refractive index of the material between the nanopillars, and n1≠n2.
(FR)
La présente invention concerne une diode électroluminescente à points quantiques et son procédé de fabrication. La diode électroluminescente à points quantiques comprend une électrode inférieure, une électrode supérieure et une couche électroluminescente à points quantiques placée entre l'électrode inférieure et l'électrode supérieure ; la diode électroluminescente à points quantiques est une diode électroluminescente à points quantiques à émission par le bas ; la surface de l'électrode inférieure proche de la couche électroluminescente à points quantiques est dotée d'un réseau de nanopiliers constitué de multiples nanopiliers ; dans le réseau de nanopiliers, le diamètre du nanopilier est λ/(4×n1), et la distance entre deux nanopiliers adjacents est λ/(4×n2), λ étant la longueur d'onde centrale de la lumière de sortie de la diode électroluminescente à points quantiques, n1 étant l'indice de réfraction du matériau des nanopiliers, n2 étant l'indice de réfraction du matériau entre les nanopiliers et n1≠n2.
(ZH)
一种量子点发光二极管及其制备方法。该量子点发光二极管包括底电极、顶电极以及设置在所述底电极和所述顶电极之间的量子点发光层,所述量子点发光二极管为底发射型量子点发光二极管,所述底电极靠近所述量子点发光层的表面设置有若干纳米柱组成的纳米柱阵列;所述纳米柱阵列中,所述纳米柱阵列中,所述纳米柱的直径为λ/(4×n 1),且任意相邻两个纳米柱之间的间距均为λ/(4×n 2);其中,λ为所述量子点发光二极管的输出光中心波长,n 1为所述纳米柱的材料的折射率,n 2为所述纳米柱之间的材料的折射率,且n 1≠n 2
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