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1. WO2020134243 - QUANTUM WELL STRUCTURE PREPARATION METHOD AND QUANTUM WELL STRUCTURE

Publication Number WO/2020/134243
Publication Date 02.07.2020
International Application No. PCT/CN2019/107881
International Filing Date 25.09.2019
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
H01L 33/0087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0083for devices with an active region comprising only II-VI compounds
0087with a substrate not being a II-VI compound
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 叶炜浩 YE, Weihao
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811632413.628.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM WELL STRUCTURE PREPARATION METHOD AND QUANTUM WELL STRUCTURE
(FR) PROCÉDÉ DE PRÉPARATION DE STRUCTURE DE PUITS QUANTIQUE ET STRUCTURE DE PUITS QUANTIQUE
(ZH) 一种量子阱结构的制备方法和量子阱结构
Abstract
(EN)
Disclosed is a quantum well structure preparation method. The quantum well structure preparation method comprises: implanting doped metal, a barrier layer cationic precursor and a barrier layer anionic precursor, and carrying out deposition on a surface of a substrate to prepare a barrier layer (S01); and successively implanting a quantum dot anionic precursor and a quantum dot cationic precursor, and carrying out deposition on a surface of the barrier layer to prepare semiconductor quantum dots (S02), wherein atoms of the doped metal lack electrons, and an absolute value of a difference between the radius of the doped metal and the radius of a barrier layer cation is 0.1 angstrom-0.3 angstrom. Nucleation sites distributed uniformly are formed on a surface of a barrier layer by means of introducing doped metal, such that the uniformity of the growth of quantum dots on the surface of the barrier layer is improved, and the quantum efficiency of a quantum well is improved.
(FR)
Procédé de préparation de structure de puits quantique. Le procédé de préparation de structure de puits quantique consiste à : implanter un métal dopé, un précurseur cationique de couche barrière et un précurseur anionique de couche barrière, et réaliser un dépôt sur une surface d'un substrat pour préparer une couche barrière (S01) ; et implanter successivement un précurseur anionique de point quantique et un précurseur cationique de point quantique, et réaliser un dépôt sur une surface de la couche barrière pour préparer des points quantiques semi-conducteurs (S02), les atomes du métal dopé étant dépourvus d'électrons, et une valeur absolue d'une différence entre le rayon du métal dopé et le rayon d'un cation de couche barrière étant de 0,1 angström à 0,3 angström. Des sites de nucléation répartis uniformément sont formés sur une surface d'une couche barrière par l'introduction d'un métal dopé, de telle sorte que l'uniformité de la croissance de points quantiques sur la surface de la couche barrière est améliorée, et l'efficacité quantique d'un puits quantique est améliorée.
(ZH)
一种量子阱结构的制备方法,该量子阱结构的制备方法包括:注入掺杂金属、势垒层阳离子前驱体和势垒层阴离子前驱体,在衬底的表面进行沉积,制备势垒层(S01);先后注入量子点阴离子前驱体和量子点阳离子前驱体,在势垒层的表面进行沉积,制备半导体量子点(S02);其中,掺杂金属原子缺电子,且掺杂金属的半径与势垒层阳离子的半径之差的绝对值为0.1~0.3埃。通过引入掺杂金属在势垒层表面形成均匀分布的成核点,改善了量子点在势垒层表面生长的均匀性,提高了量子阱的量子效率。
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