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1. WO2020134208 - QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/134208
Publication Date 02.07.2020
International Application No. PCT/CN2019/106143
International Filing Date 17.09.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 黎瑞锋 LI, Ruifeng
  • 钱磊 QIAN, Lei
  • 曹蔚然 CAO, Weiran
  • 刘文勇 LIU, Wenyong
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811635038.029.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 量子点发光二极管及其制备方法
Abstract
(EN)
A quantum dot light-emitting diode, comprising a cathode and an anode arranged opposite to each other, a quantum dot light-emitting layer disposed between the cathode and the anode, and a stack disposed between the cathode and the quantum dot light-emitting layer. The stack comprises a first metal oxide nanoparticle layer and a mixed material layer disposed on a surface of the first metal oxide nanoparticle layer facing away from the quantum dot light-emitting layer. The material of the mixed material layer comprises first metal oxide nanoparticles and a second metal oxide dispersed in gaps of the first metal oxide nanoparticles. The first metal oxide nanoparticles in the first metal oxide nanoparticle layer are an electron transport material; and in the mixed material layer, the content of the second metal oxide gradually increases along the direction from the quantum dot light-emitting layer to the cathode.
(FR)
L'invention concerne une diode électroluminescente à points quantiques, comprenant une cathode et une anode disposées à l'opposé l'une de l'autre, une couche électroluminescente à points quantiques disposée entre la cathode et l'anode et un empilement disposé entre la cathode et la couche électroluminescente à points quantiques. L'empilement comprend une première couche de nanoparticules d'oxyde métallique et une couche de matériau mélangé disposée sur une surface de la première couche de nanoparticules d'oxyde métallique orientée à l'opposé de la couche électroluminescente à points quantiques. Le matériau de la couche de matériau mélangé comprend des premières nanoparticules d'oxyde métallique et un deuxième oxyde métallique dispersé dans des espaces des premières nanoparticules d'oxyde métallique. Les premières nanoparticules d'oxyde métallique dans la première couche de nanoparticules d'oxyde métallique sont un matériau de transport d'électrons ; et dans la couche de matériau mélangé, la teneur du deuxième oxyde métallique augmente progressivement le long de la direction allant de la couche électroluminescente à points quantiques à la cathode.
(ZH)
一种量子点发光二极管,包括相对设置的阴极和阳极,在阴极和阳极之间设置的量子点发光层,设置在阴极和量子点发光层之间的叠层,叠层包括第一金属氧化物纳米颗粒层以及设置在第一金属氧化物纳米颗粒层背离量子点发光层表面的混合材料层,混合材料层的材料包括第一金属氧化物纳米颗粒和分散在第一金属氧化物纳米颗粒间隙中的第二金属氧化物,第一金属氧化物纳米颗粒层中的第一金属氧化物纳米颗粒为电子传输材料;且混合材料层中,沿量子点发光层到阴极的方向,第二金属氧化物的含量逐渐增加。
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