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1. WO2020134207 - POST-TREATMENT METHOD OF QUANTUM DOT LIGHT-EMITTING DIODE

Publication Number WO/2020/134207
Publication Date 02.07.2020
International Application No. PCT/CN2019/106142
International Filing Date 17.09.2019
IPC
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 张节 ZHANG, Jie
  • 向超宇 XIANG, Chaoyu
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811635589.729.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) POST-TREATMENT METHOD OF QUANTUM DOT LIGHT-EMITTING DIODE
(FR) PROCÉDÉ DE POST-TRAITEMENT DE DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES
(ZH) 量子点发光二极管的后处理方法
Abstract
(EN)
A post-treatment method of a quantum dot light-emitting diode, comprising the following steps: providing the quantum dot light-emitting diode, which comprises a cathode and an anode arranged oppositely, and a quantum dot light-emitting layer arranged between the cathode and the anode; energizing the cathode and the anode of the quantum dot light-emitting diode, and performing lighting treatment on the quantum dot light-emitting diode.
(FR)
L'invention concerne un procédé de post-traitement d'une diode électroluminescente à points quantiques, comprenant les étapes suivantes consistant à : fournir la diode électroluminescente à points quantiques, qui comprend une cathode et une anode disposées de manière opposée, et une couche électroluminescente à points quantiques disposée entre la cathode et l'anode ; exciter la cathode et l'anode de la diode électroluminescente à points quantiques, et effectuer un traitement d'éclairage sur la diode électroluminescente à points quantiques.
(ZH)
一种量子点发光二极管的后处理方法,包括以下步骤:提供量子点发光二极管,量子点发光二极管包括相对设置的阴极和阳极,以及设置在阴极和阳极之间的量子点发光层;将量子点发光二极管的阴极和阳极通电,并对量子点发光二极管进行光照处理。
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