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1. WO2020134205 - MANUFACTURING METHOD FOR QUANTUM DOT LIGHT EMITTING DIODE, AND QUANTUM DOT INK

Publication Number WO/2020/134205
Publication Date 02.07.2020
International Application No. PCT/CN2019/106140
International Filing Date 17.09.2019
IPC
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
C09D 11/50
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
11Inks
50Sympathetic, colour changing or similar inks
H01L 51/0003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
H01L 51/0026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0026Thermal treatment of the active layer, e.g. annealing
H01L 51/0062
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
0062aromatic compounds comprising a hetero atom, e.g.: N,P,S
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 张节 ZHANG, Jie
  • 向超宇 XIANG, Chaoyu
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811639169.629.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MANUFACTURING METHOD FOR QUANTUM DOT LIGHT EMITTING DIODE, AND QUANTUM DOT INK
(FR) PROCÉDÉ DE FABRICATION DE DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES, ET ENCRE À POINTS QUANTIQUES
(ZH) 量子点发光二极管的制备方法及量子点墨水
Abstract
(EN)
Disclosed is a manufacturing method for a quantum dot light emitting diode. The method comprises: providing a quantum dot ink, wherein the quantum dot ink comprises a solvent system and quantum dots dispersed in the solvent system, and the solvent system comprises a nonpolar solvent and a dopant compound; and providing a cathode substrate or an anode substrate, depositing the quantum dot ink on the cathode substrate or the anode substrate and then performing light irradiation treatment, and annealing to obtain a quantum dot light emitting layer, wherein the dopant compound can be photo-dissociated into an ionic compound subsequent to the light irradiation treatment.
(FR)
L'invention concerne un procédé de fabrication d'une diode électroluminescente à points quantiques. Le procédé consiste : à produire une encre à points quantiques, l'encre à points quantiques comprenant un système de solvants et des points quantiques dispersés dans le système de solvants, et le système de solvants comprenant un solvant non polaire et un composé de dopant; et à produire un substrat de cathode ou un substrat d'anode, à déposer l'encre à points quantiques sur le substrat de cathode ou sur le substrat d'anode et puis à procéder à un traitement par irradiation de lumière, et à recuire pour obtenir une couche électroluminescente à points quantiques, le composé de dopant pouvant être photo-dissocié en un composé ionique à la suite du traitement par irradiation de lumière.
(ZH)
本申请公开一种量子点发光二极管的制备方法,包括:提供量子点墨水,所述量子点墨水包括溶剂体系和分散在溶剂体系中的量子点,其中,所述溶剂体系包括非极性溶剂和掺杂化合物;提供阴极基板或阳极基板,在所述阴极基板或所述阳极基板上沉积所述量子点墨水后进行光照处理,退火制备得到量子点发光层,其中,所述掺杂化合物为经光照处理后能光解为离子的化合物。
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