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1. WO2020134204 - METHOD FOR MANUFACTURING QUANTUM DOT LIGHT-EMITTING DIODE

Publication Number WO/2020/134204
Publication Date 02.07.2020
International Application No. PCT/CN2019/106139
International Filing Date 17.09.2019
IPC
H01L 51/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 张节 ZHANG, Jie
  • 向超宇 XIANG, Chaoyu
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811639626.129.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR MANUFACTURING QUANTUM DOT LIGHT-EMITTING DIODE
(FR) PROCÉDÉ DE FABRICATION DE DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES
(ZH) 量子点发光二极管的制备方法
Abstract
(EN)
A method for manufacturing a quantum dot light-emitting diode, comprising the following steps: providing a substrate provided with an electron transport layer (S01); depositing a solution on the surface of the electron transport layer, leaving it stand until the electron transport layer is wetted, and then drying same, wherein the solution comprises a main solvent and a solute dissolved in the main solvent, the polarity of the solute is greater than the polarity of the main solvent, and the electron transport material in the electron transport layer is not dissolved in the solution (S02); manufacturing other film layers on the electron transport layer treated by the mixed solvent to manufacture a quantum dot light-emitting diode, and making the quantum dot light-emitting diode comprise at least the following structure: an anode and a cathode opposite to each other, a quantum dot light-emitting layer disposed between the anode and the cathode, and an electron transport layer disposed between the quantum dot light-emitting layer and the cathode (S03).
(FR)
Procédé de fabrication d'une diode électroluminescente à points quantiques, comprenant les étapes suivantes consistant à : fournir un substrat pourvu d'une couche de transport d'électrons (S01); déposer une solution sur la surface de la couche de transport d'électrons, la laisser reposer jusqu'à ce que la couche de transport d'électrons soit mouillée, puis la sécher, la solution comprenant un solvant principal et un soluté dissous dans le solvant principal, la polarité du soluté est supérieure à la polarité du solvant principal, et le matériau de transport d'électrons dans la couche de transport d'électrons n'est pas dissous dans la solution (S02); fabriquer d'autres couches de film sur la couche de transport d'électrons traitée par le solvant mixte afin de fabriquer une diode électroluminescente à points quantiques, et fabriquer la diode électroluminescente à points quantiques comprenant au moins la structure suivante : une anode et une cathode opposées l'une à l'autre, une couche électroluminescente à points quantiques disposée entre l'anode et la cathode, et une couche de transport d'électrons disposée entre la couche électroluminescente à points quantiques et la cathode (S03).
(ZH)
一种量子点发光二极管的制备方法,包括以下步骤:提供设置有电子传输层的基板(S01);在电子传输层表面沉积溶液,静置至电子传输层浸润后进行干燥处理,溶液包括主体溶剂和溶于主体溶剂中的溶质,溶质的极性大于主体溶剂的极性,且溶液不溶解电子传输层中的电子传输材料(S02);在经混合溶剂处理后的电子传输层上制备其它膜层,制备量子点发光二极管,且使得量子点发光二极管至少包括以下结构:相对设置的阳极和阴极,设置在阳极和阴极之间的量子点发光层,设置在量子点发光层与阴极之间的电子传输层(S03)。
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