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1. WO2020134177 - COMPONENT HAVING REVERSE FLOW FUNCTION

Publication Number WO/2020/134177
Publication Date 02.07.2020
International Application No. PCT/CN2019/104539
International Filing Date 05.09.2019
IPC
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/747 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
74Thyristor-type devices, e.g. having four-zone regenerative action
747Bidirectional devices, e.g. triacs
CPC
H01L 29/0684
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
H01L 29/0834
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
083Anode or cathode regions of thyristors or gated bipolar-mode devices
0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
H01L 29/747
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
74Thyristor-type devices, e.g. having four-zone regenerative action
747Bidirectional devices, e.g. triacs
Applicants
  • 清华大学 TSINGHUA UNIVERSITY [CN]/[CN]
Inventors
  • 曾嵘 ZENG, Rong
  • 刘佳鹏 LIU, Jiapeng
  • 周文鹏 ZHOU, Wenpeng
  • 赵彪 ZHAO, Biao
  • 余占清 YU, Zhanqing
  • 陈政宇 CHEN, Zhengyu
Agents
  • 北京知联天下知识产权代理事务所(普通合伙) BEIJING IPLING INTELLECTUAL PROPERTY LAW FIRM
Priority Data
201811613543.527.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) COMPONENT HAVING REVERSE FLOW FUNCTION
(FR) COMPOSANT AYANT UNE FONCTION DE FLUX INVERSE
(ZH) 一种具有反向通流功能的器件
Abstract
(EN)
Provided in the present invention is a component having a reverse flow function. The component improves the characteristics of a GCT chip by doping an n+ buffer layer of a GCT chip module with a p+ transmitting electrode and by preparing a high-concentration p+ doping below a gate electrode; and allows the GCT chip to be provided with a reverse flow between a cathode and the gate electrode by means of an IGCT driver circuit or an ETO driver circuit connected to the GCT chip module, thus implementing a reverse flow function of an IGCT or ETO component, and ensuring that the component is still provided with the performance of a conventional IGCT or ETO component during forward conduction. At the same time, without altering an existing GCT structure and affecting the normal functions of the IGCT or ETO component, the component implements the reverse flow of the IGCT or ETO component, the process steps are simple, and the yield of industrial production is increased.
(FR)
La présente invention concerne un composant ayant une fonction de flux inverse. Le composant améliore les caractéristiques d'une puce GCT par dopage d'une couche tampon n + d'un module de puce GCT avec une électrode de transmission p+ et par préparation d'un dopage à concentration élevée p+ en dessous d'une électrode de grille ; et permet à la puce GCT d'être pourvue d'un flux inverse entre une cathode et l'électrode de grille au moyen d'un circuit d'attaque IGCT ou d'un circuit d'attaque ETO connecté au module de puce GCT, ce qui permet de mettre en œuvre une fonction de flux inverse d'un composant IGCT ou ETO, et de garantir que le composant est toujours pourvu des performances d'un composant IGCT ou ETO classique pendant la conduction avant. En même temps, sans modifier une structure GCT existante ni affecter les fonctions normales du composant IGCT ou ETO, le composant met en œuvre le flux inverse du composant IGCT ou ETO, les étapes de processus sont simples, et le rendement de production industrielle est augmenté.
(ZH)
本发明提出了一种具备反向通流功能的器件,所述器件通过GCT芯片模块n+缓冲层与p+发射极掺杂以及在门极下方制作高浓度p+掺杂,改善GCT芯片的特性;并通过设置连接在GCT芯片模块上的IGCT驱动电路或ETO驱动电路,使所述GCT芯片的阴极和门极之间形成反向通流,实现IGCT或ETO器件的反向通流功能,并且保证了所述器件在正向导通时仍具有传统IGCT或ETO器件的性能;同时,所述器件在不改变原有GCT结构以及不影响IGCT或ETO器件正常功能的情况下,实现IGCT或ETO器件的反向通流,工艺步骤简单,提高了工业生产的成品率。
Also published as
Latest bibliographic data on file with the International Bureau