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1. WO2020134163 - QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/134163
Publication Date 02.07.2020
International Application No. PCT/CN2019/104013
International Filing Date 02.09.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/5004
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5004characterised by the interrelation between parameters of constituting active layers, e.g. HOMO-LUMO relation
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/5044
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
5036Multi-colour light emission, e.g. colour tuning, polymer blend, stack of electroluminescent layers
504Stack of electroluminescent layers
5044with spacer layers between the emissive layers
H01L 51/5096
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5096Carrier blocking layer
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 聂志文 NIE, Zhiwen
  • 杨一行 YANG, Yixing
Agents
  • 深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY (SHENZHEN)
Priority Data
201811643094.929.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 一种量子点发光二极管及其制备方法
Abstract
(EN)
Disclosed are a quantum dot light-emitting diode and a preparation method therefor. The quantum dot light-emitting diode comprises a cathode, an anode and a light-emitting layer arranged between the cathode and the anode, wherein the light-emitting layer comprises n layers of quantum dot light-emitting layers arranged in a stacked manner, and n-1 layers of electron blocking material layers arranged between two adjacent layers of quantum dot light-emitting layers, and n is an integer greater than or equal to two. The quantum dot light-emitting diode of the present disclosure can effectively balance injection rates of electrons and holes by means of the arrangement of the light-emitting layer, thereby improving the recombination efficiency of a carrier in a quantum dot light-emitting layer, and thus improving the light-emitting efficiency, stability and service life of the quantum dot light-emitting diode.
(FR)
Diode électroluminescente à points quantiques et son procédé de préparation. La diode électroluminescente à points quantiques comprend une cathode, une anode et une couche électroluminescente agencée entre la cathode et l'anode, la couche électroluminescente comprenant n couches de couches électroluminescentes à points quantiques agencées en quinconce, et n-1 couches de couches de matériau de blocage d'électrons agencées entre deux couches adjacentes de couches électroluminescentes à points quantiques, et n est un nombre entier supérieur ou égal à deux. La diode électroluminescente à points quantiques de la présente invention peut équilibrer efficacement les taux d'injection d'électrons et de trous au moyen de l'agencement de la couche électroluminescente, ce qui permet d'améliorer l'efficacité de recombinaison d'un support dans une couche électroluminescente à points quantiques, et d'améliorer ainsi l'efficacité d'émission de lumière, la stabilité et la durée de vie de la diode électroluminescente à points quantiques.
(ZH)
公开一种量子点发光二极管及其制备方法,所述量子点发光二极管包括阴极、阳极以及设置在阴极和阳极之间的发光层,所述发光层包括层叠设置的n层量子点发光层,相邻的所述两层量子点发光层之间设置有n-1层电子阻挡材料层,其中,n为大于等于2的整数。本公开量子点发光二极管通过所述发光层的设置能够有效平衡电子和空穴的注入速率,从而提高载流子在量子点发光层中的复合效率,进而提高量子点发光二极管的发光效率、稳定性和使用寿命。
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