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1. WO2020134157 - QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/134157
Publication Date 02.07.2020
International Application No. PCT/CN2019/103878
International Filing Date 30.08.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/5088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5088Carrier injection layer
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 眭俊 SUI, Jun
  • 谢相伟 XIE, Xiangwei
  • 黄航 HUANG, Hang
  • 苏亮 SU, Liang
  • 田亚蒙 TIAN, Yameng
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811626635.728.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 量子点发光二极管及其制备方法
Abstract
(EN)
The application discloses a quantum dot light-emitting diode and a preparation method therefor. A quantum dot light-emitting diode, comprising an anode, a cathode and a quantum dot light-emitting layer located between the anode and the cathode. A material layer composed of organic molecules is provided between the anode and the quantum dot light-emitting layer; and the organic molecules contain electron-withdrawing groups. The material layer composed of organic molecules containing electron-withdrawing groups is able to reduce the hole injection barrier from the anode to a quantum dot material, thereby improving hole injection efficiency of a device, achieving a good balance of injection of holes and electrons, and finally improving the performance of the device.
(FR)
L'invention concerne une diode électroluminescente à points quantiques et son procédé de préparation. Une diode électroluminescente à points quantiques comprend une anode, une cathode et une couche électroluminescente à points quantiques entre l'anode et la cathode. Une couche de matériau composée de molécules organiques est disposée entre l'anode et la couche électroluminescente à points quantiques ; et les molécules organiques contiennent des groupes attracteur d'électrons. La couche de matériau composée de molécules organiques contenant des groupes attracteur d'électrons est capable de la barrière à l'injection de trous à partir de l'anode jusqu’à un matériau à points quantiques, ce qui permet d'améliorer l'efficacité d'injection de trous d'un dispositif, d'obtenir un bon équilibre d'injection de trous et d'électrons, et enfin d'améliorer les performances du dispositif.
(ZH)
本申请公开一种量子点发光二极管及其制备方法。一种量子点发光二极管,包括阳极、阴极以及位于所述阳极和所述阴极之间的量子点发光层,所述阳极与所述量子点发光层之间设置由有机分子组成的材料层,所述有机分子含有吸电子基团。该含有吸电子基团有机分子组成的材料层,能降低阳极到量子点材料的空穴注入势垒,从而提高器件的空穴注入效率,使空穴跟电子的注入更平衡,最终提高器件的性能。
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Latest bibliographic data on file with the International Bureau