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1. WO2020134151 - QUANTUM DOT LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/134151
Publication Date 02.07.2020
International Application No. PCT/CN2019/103620
International Filing Date 30.08.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/5076
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5048Carrier transporting layer
5072Electron transporting layer
5076comprising a dopant
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 黎瑞锋 LI, Ruifeng
  • 钱磊 QIAN, Lei
  • 曹蔚然 CAO, Weiran
  • 刘文勇 LIU, Wenyong
Agents
  • 深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY (SHENZHEN)
Priority Data
201811647285.229.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种量子点发光二极管及其制备方法
Abstract
(EN)
A quantum dot light-emitting diode and a manufacturing method therefor. The manufacturing method comprises the steps of: providing a solution, the solution comprising zinc oxide nanoparticles and a carboxylate ester; and providing an anode substrate, depositing the solution on the anode substrate and heating to produce an electron transport layer; or, providing a cathode substrate, depositing the solution on the cathode substrate and heating to produce an electron transport layer. By adding the carboxylate ester in the process of manufacturing the electron transport layer per a solution method, erosion by water and oxygen is mitigated, thus effectively increasing the service life of a component.
(FR)
L'invention concerne une diode électroluminescente à points quantiques et son procédé de fabrication. Le procédé de fabrication comprend les étapes consistant à : fournir une solution, la solution comprenant des nanoparticules d'oxyde de zinc et un ester carboxylate ; et fournir un substrat d'anode, déposer la solution sur le substrat d'anode et chauffer pour produire une couche de transport d'électrons ; ou fournir un substrat de cathode, déposer la solution sur le substrat de cathode et chauffer pour produire une couche de transport d'électrons. En ajoutant l'ester carboxylate dans le procédé de fabrication de la couche de transport d'électrons par procédé de solution, l'érosion par l'eau et l'oxygène est atténuée, ce qui permet d'augmenter efficacement la durée de vie d'un composant.
(ZH)
一种量子点发光二极管及其制备方法,所述制备方法包括步骤:提供溶液,所述溶液包括氧化锌纳米颗粒和羧酸酯;提供阳极基板,将所述溶液沉积在阳极基板上加热,制备得到电子传输层;或者,提供阴极基板,将所述溶液沉积在所述阴极基板上加热,制备得到电子传输层。通过溶液法在制备电子传输层的过程中加入羧酸酯,可以减缓水氧的侵蚀,有效地提升器件的工作寿命。
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