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1. WO2020133782 - DRY ETCHING MACHINE AND DRY ETCHING METHOD

Publication Number WO/2020/133782
Publication Date 02.07.2020
International Application No. PCT/CN2019/081065
International Filing Date 02.04.2019
IPC
H01L 21/67 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01J 37/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
CPC
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
Applicants
  • 武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 高鹏飞 GAO, Pengfei
  • 丁玎 DING, Ding
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT&TRADEMARK AGENCY
Priority Data
201811646355.229.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) DRY ETCHING MACHINE AND DRY ETCHING METHOD
(FR) MACHINE DE GRAVURE SÈCHE ET PROCÉDÉ DE GRAVURE SÈCHE
(ZH) 干法刻蚀机台及干法刻蚀方法
Abstract
(EN)
The present application provides a dry etching machine and a dry etching method, wherein the dry etching machine comprises a process cavity for etching a substrate, the process cavity comprises a bottom plate, a lifting component, a rotating component and a carrying component. A substrate fixing device is arranged on the carrying component. During dry etching, the lifting component and the rotating component are adjusted to make the etched surface of the substrate face down. Etching plasma is released from air hole in the bottom plate and diffuses upwards to the etched surface. The dry etching machine can prevent impurities on the top and side wall of the process cavity from falling onto the etched surface in the etching process to influence the etching quality. The present application further provides the dry etching method, comprising the steps of performing dry etching on the substrate by using the described dry etching machine, and the method can prevent impurities on the top and side wall of the process cavity from falling onto the etched surface in the etching process to influence the etching quality.
(FR)
La présente invention concerne une machine de gravure sèche et un procédé de gravure sèche, la machine de gravure sèche comprenant une cavité de traitement pour graver un substrat, la cavité de traitement comprenant une plaque inférieure, un composant de levage, un composant de rotation et un composant de support. Un dispositif de fixation de substrat est agencé sur le composant de support. Pendant la gravure sèche, le composant de levage et le composant de rotation sont ajustés pour orienter vers le bas la surface gravée du substrat. Un plasma de gravure est libéré par un trou d'air dans la plaque inférieure et se diffuse vers le haut jusqu'à la surface gravée. La machine de gravure sèche peut empêcher que des impuretés présentes sur les parois supérieure et latérale de la cavité de traitement ne tombent sur la surface gravée dans le processus de gravure pour influer sur la qualité de gravure. La présente invention concerne en outre le procédé de gravure sèche, comprenant les étapes consistant à effectuer une gravure sèche sur le substrat à l'aide de la machine de gravure sèche décrite, et le procédé peut empêcher que des impuretés présentes sur les parois supérieure et latérale de la cavité de traitement ne tombent sur la surface gravée dans le processus de gravure pour influer sur la qualité de gravure.
(ZH)
本申请提供了一种干法刻蚀机台及干法刻蚀方法,所述干法刻蚀机台包括用于对基板进行刻蚀的制程腔,所述制程腔包括底板、升降部件、转动部件和承载部件,所述承载部件上设置有基板固定装置,进行干法刻蚀时,调整升降部件和转动部件,使基板的刻蚀面朝下,刻蚀用等离子体从底板上的气孔中释放并向上扩散至刻蚀面,该干法刻蚀机台可防止刻蚀过程中制程腔顶部和侧壁的杂质掉落至刻蚀面而影响刻蚀质量;本申请还提供了一种干法刻蚀方法,包括使用上述干法刻蚀机台对基板进行干法刻蚀的步骤,该方法可避免刻蚀过程中制程腔顶部和侧壁的杂质掉落至刻蚀面而影响刻蚀质量。
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