Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020133722 - QUANTUM DOT LED, FABRICATION METHOD THEREFOR, AND ELECTRONIC DEVICE

Publication Number WO/2020/133722
Publication Date 02.07.2020
International Application No. PCT/CN2019/078222
International Filing Date 15.03.2019
IPC
H01L 51/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • 深圳市华星光电半导体显示技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 樊勇 FAN, Yong
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Priority Data
201811597417.526.12.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LED, FABRICATION METHOD THEREFOR, AND ELECTRONIC DEVICE
(FR) DEL À POINTS QUANTIQUES, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF ÉLECTRONIQUE
(ZH) 量子点LED及其制作方法、电子装置
Abstract
(EN)
Disclosed are a quantum dot LED (100) and a fabrication method therefor. The quantum dot LED comprises: a light emitting component (10); a first substrate (20) located on the light emitting component (10), wherein the first substrate (20) comprises a first recess, and is made of sapphire; a quantum dot layer (30) located within the first recess; and a barrier layer (40) located on the quantum dot layer (30). A sapphire material is used as an integrated first substrate (20), such that the bottom surface of the first substrate (20) is capable of fully blocking moisture and oxygen, thereby ensuring long term reliability of the quantum dot LED (100) and improving the service life thereof.
(FR)
L'invention concerne une DEL à points quantiques (100) et son procédé de fabrication. La DEL à points quantiques comprend : un composant électroluminescent (10) ; un premier substrat (20) situé sur le composant électroluminescent (10), le premier substrat (20) comprend un premier évidement, et est constitué de saphir ; une couche de points quantiques (30) située à l'intérieur du premier évidement ; et une couche barrière (40) située sur la couche de points quantiques (30). Un matériau de saphir est utilisé en tant que premier substrat intégré (20), de telle sorte que la surface inférieure du premier substrat (20) est capable de bloquer complètement l'humidité et l'oxygène, ce qui permet d'assurer une fiabilité à long terme de la DEL à points quantiques (100) et d'améliorer sa durée de vie.
(ZH)
一种量子点LED(100)及其制作方法,包括发光组件(10);位于发光组件(10)上的第一衬底(20),第一衬底(20)包括一第一凹槽;第一衬底(20)的材料为蓝宝石;位于第一凹槽内的量子点层(30);位于量子点层(30)上的阻隔层(40)。通过使用蓝宝石材料作为一体成型的第一衬底(20),使得该第一衬底(20)的底面能完全的隔绝水氧气,保证了量子点LED(100)长期使用的可靠性,提高了量子点LED(100)的使用寿命。
Related patent documents
Latest bibliographic data on file with the International Bureau