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1. WO2020133381 - LASER PACKAGE STRUCTURE

Publication Number WO/2020/133381
Publication Date 02.07.2020
International Application No. PCT/CN2018/125438
International Filing Date 29.12.2018
IPC
H01S 5/022 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
CPC
H01S 5/0231
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
023Mount members, e.g. sub-mount members
0231Stems
H01S 5/0232
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
023Mount members, e.g. sub-mount members
0232Lead-frames
H01S 5/0233
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0233Mounting configuration of laser chips
H01S 5/0235
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0235Method for mounting laser chips
H01S 5/02469
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
024Arrangements for thermal management
02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
H01S 5/02476
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
024Arrangements for thermal management
02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
Applicants
  • 泉州三安半导体科技有限公司 QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD [CN]/[CN]
Inventors
  • 陈辉 CHEN, Hui
  • 时军朋 SHI, Junpeng
  • 廖启维 LIAO, Chi-wei
  • 黄永特 WONG, Weng-Tack
  • 徐宸科 HSU, Chen-ke
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) LASER PACKAGE STRUCTURE
(FR) STRUCTURE DE BOÎTIER LASER
(ZH) 一种激光器封装结构
Abstract
(EN)
A laser package structure comprises: a frame (210) comprising a front circuit layer, a back circuit layer (280) and an internal circuit layer (270) positioned inside the frame (210), wherein the internal circuit layer (270) has multiple circuit connection units (271-274), each circuit connection unit (271-274) has a first connection through hole (A1/A2/C2) and a second connection through hole (B1/B2), the first connection through hole (A1/A2/C2) is connected to the front circuit layer, the second connection through hole (B1/B2) is connected to the back circuit layer (280), the second connection through hole (B1/B2) is positioned at one end portion of the circuit connection unit (271-274), and the first connection through hole (A1/A2/C2) is positioned at an inner side of the second connection through hole (B1/B2); and a laser chip (220) fixed at the front circuit layer of the frame (210), and used to emit a first laser beam.
(FR)
Structure de boîtier laser qui comprend : un cadre (210) comprenant une couche de circuit avant, une couche de circuit arrière (280) et une couche de circuit interne (270) positionnées à l'intérieur du cadre (210); et une puce laser (220) fixée au niveau de la couche de circuit avant du cadre (210), et utilisée pour émettre un premier faisceau laser. La couche de circuit interne (270) comporte de multiples unités de connexion de circuit (271-274) dont chacune comprend un premier trou traversant de connexion (A1/A2/C2) et un second trou traversant de connexion (B1/B2). Le premier trou traversant de connexion (A1/A2/C2) est connecté à la couche de circuit avant, le second trou traversant de connexion (B1/B2) est connecté à la couche de circuit arrière (280), le second trou traversant de connexion (B1/B2) est positionné au niveau d'une partie d'extrémité de l'unité de connexion de circuit (271-274), et le premier trou traversant de connexion (A1/A2/C2) est positionné au niveau d'un côté interne du second trou traversant de connexion (B1/B2).
(ZH)
一种激光器封装结构,包括支架(210),包含正面电路层、背面电路层(280)及位于支架(210)内部的内部电路层(270),内部电路层(270)具有复数个电路连接单元(271-274),每个电路连接单元(271-274)具有第一连接通孔(A1/A2/C2)和第二连接通孔(B1/B2),其中第一连接通孔(A1/A2/C2)连接至正面电路层,第二连接通孔(B1/B2)连接至背面电路层(280),第二连接通孔(B1/B2)位于电路连接单元(271-274)的一个端部,第一连接通孔(A1/A2/C2)位于第二连接通孔(B1/B2)的内侧;激光芯片(220),固定于支架(210)的正面电路层上,可发射一第一激光光束。
Also published as
Latest bibliographic data on file with the International Bureau