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1. WO2020133059 - FUNCTIONAL DEVICE AND FABRICATION METHOD THEREFOR

Publication Number WO/2020/133059
Publication Date 02.07.2020
International Application No. PCT/CN2018/124342
International Filing Date 27.12.2018
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 深圳市柔宇科技有限公司 SHENZHEN ROYOLE TECHNOLOGIES CO. , LTD. [CN]/[CN]
Inventors
  • 游埃里克.凱翔 YU, Eric, Kai-Hsiang
Agents
  • 广州三环专利商标代理有限公司 SCIHEAD IP LAW FIRM
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) FUNCTIONAL DEVICE AND FABRICATION METHOD THEREFOR
(FR) DISPOSITIF FONCTIONNEL ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种功能器件及其制造方法
Abstract
(EN)
A fabrication method for a functional device and the functional device. The method comprises: providing a base substrate (110) (S110); forming a first amorphous semiconductor layer (130) (S120); depositing a first insulating layer (140) on the first amorphous semiconductor layer (130) (S130); forming a first opening (141) on the first insulating layer (140) so that the first amorphous semiconductor layer (130) is partially exposed (S140); depositing a metal catalytic layer (160), wherein the metal catalytic layer (160) is deposited into the first opening (141) and is in contact with the first amorphous semiconductor layer (130) (S150); performing an annealing and crystallization treatment so that the first amorphous semiconductor layer (130) is crystallized into a first polycrystalline semiconductor layer (230) by means of metal catalysis (S160); treating the metal catalytic layer (160) so as to form a functional metal layer (161) (S170); and preparing other film layers so as to form a functional device (S180). The described method has the advantages of simplifying the fabrication process, reducing steps and reducing costs.
(FR)
L'invention concerne un procédé de fabrication d'un dispositif fonctionnel et le dispositif fonctionnel. Le procédé comprend les étapes consistant à : fournir un substrat de base (110) (S110) ; former une première couche semi-conductrice amorphe (130) (S120) ; déposer une première couche isolante (140) sur la première couche semi-conductrice amorphe (130) (S130) ; former une première ouverture (141) sur la première couche isolante (140) de telle sorte que la première couche semi-conductrice amorphe (130) est partiellement exposée (S140) ; déposer une couche catalytique métallique (160), la couche catalytique métallique (160) étant déposée dans la première ouverture (141) et en contact avec la première couche semi-conductrice amorphe (130) (S150) ; réaliser un traitement de recuit et de cristallisation de telle sorte que la première couche semi-conductrice amorphe (130) est cristallisée en une première couche semi-conductrice polycristalline (230) par catalyse métallique (S160) ; traiter la couche catalytique métallique (160) de manière à former une couche métallique fonctionnelle (161) (S170) ; et préparer d'autres couches de film de manière à former un dispositif fonctionnel (S180). Le procédé décrit présente les avantages de simplifier le processus de fabrication, de réduire les étapes et de réduire les coûts.
(ZH)
一种功能器件的制造方法及功能器件,所述方法包括:提供衬底基板(110)(S110);形成第一非晶态半导体层(130)(S120);沉积第一绝缘层(140)在第一非晶态半导体层(130)上(S130);在第一绝缘层(140)上形成第一开口(141)以使第一非晶态半导体层(130)部分裸露(S140);沉积金属催化层(160),并且所述金属催化层(160)沉积到第一开口(141)中且与第一非晶态半导体层(130)接触(S150);进行退火结晶处理,以使所述第一非晶态半导体层(130)通过金属催化结晶为第一多晶态半导体层(230)(S160);对所述金属催化层(160)处理以形成功能金属层(161)(S170);制备其他膜层以形成功能器件(S180)。该方法具有可简化制程、减少步骤、降低成本的优点。
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