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1. WO2020132997 - SINGLE CRYSTAL PIEZOELECTRIC THIN FILM BULK ACOUSTIC WAVE RESONATOR AND FORMING METHOD THEREFOR

Publication Number WO/2020/132997
Publication Date 02.07.2020
International Application No. PCT/CN2018/124078
International Filing Date 26.12.2018
IPC
H01L 41/35 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35Forming piezo-electric or electrostrictive materials
H01L 41/09 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
09with electrical input and mechanical output
H03H 9/17 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
CPC
H01L 41/09
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
09with electrical input and mechanical output ; , e.g. actuators, vibrators
H01L 41/35
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35Forming piezo-electric or electrostrictive materials
H03H 9/17
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
Applicants
  • 天津大学 TIANJIN UNIVERSITY [CN]/[CN]
  • 诺思(天津)微系统有限责任公司 ROFS MICROSYSTEM (TIANJIN) CO, .LTD. [CN]/[CN]
Inventors
  • 庞慰 PANG, Wei
  • 孙崇玲 SUN, Chongling
  • 杨清瑞 YANG, Qingrui
  • 张孟伦 ZHANG, Menglun
Agents
  • 北京汉智嘉成知识产权代理有限公司 CHINA SMART INTELLECTUAL PROPERTY LTD.
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SINGLE CRYSTAL PIEZOELECTRIC THIN FILM BULK ACOUSTIC WAVE RESONATOR AND FORMING METHOD THEREFOR
(FR) RÉSONATEUR D’ONDES ACOUSTIQUES EN VOLUME À PELLICULE MINCE PIÉZOÉLECTRIQUE MONOCRISTALLINE ET SON PROCÉDÉ DE FORMATION
(ZH) 单晶压电薄膜体声波谐振器及其形成方法
Abstract
(EN)
A single crystal piezoelectric thin film bulk acoustic wave resonator and a forming method therefor, the forming method comprising: forming a piezoelectric structure and a bottom electrode on a donor substrate, wherein the bottom electrode is above the piezoelectric structure; forming a cavity at a top surface of a transfer substrate; detaching the piezoelectric structure and the bottom electrode from the donor substrate, and inverting and transferring same onto the transfer substrate, wherein the bottom electrode is above the transfer substrate and covers the cavity once the inverted transfer is complete, and the piezoelectric structure is above the bottom electrode; and forming a top electrode above the piezoelectric structure. The described method is simple and easy, and the resonator has good performance.
(FR)
L’invention concerne un résonateur d’ondes acoustiques en volume à pellicule mince piézoélectrique monocristalline et son procédé de formation, le procédé de formation consistant : à former une structure piézoélectrique et une électrode inférieure sur un substrat donneur, l’électrode inférieure étant au-dessus de la structure piézoélectrique ; à former une cavité au niveau d'une surface supérieure d’un substrat de transfert ; à détacher la structure piézoélectrique et l’électrode inférieure du substrat donneur, et à les inverser et à les retourner sur le substrat de transfert, l’électrode inférieure étant au-dessus du substrat de transfert et recouvrant la cavité une fois que le transfert inversé est terminé, et la structure piézoélectrique étant au-dessus de l’électrode inférieure ; et à former une électrode supérieure au-dessus de la structure piézoélectrique. Le procédé selon l’invention est simple et facile, et le résonateur a une bonne performance.
(ZH)
一种单晶压电薄膜体声波谐振器及其形成方法,该形成方法包括:在供体基底之上形成压电结构和底电极,其中底电极在压电结构之上;在转移基底的顶表面形成空腔;将压电结构和底电极脱离供体基底并且倒置转移到转移基底之上,并且其中,倒置转移完毕后底电极在转移基底之上并且覆盖空腔,压电结构在底电极之上;在压电结构之上形成顶电极。该方法简便易行,该谐振器性能良好。
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