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1. WO2020132993 - CONNECTING STRUCTURE OF FLEXIBLE SUBSTRATE THIN FILM BULK ACOUSTIC WAVE FILTER

Publication Number WO/2020/132993
Publication Date 02.07.2020
International Application No. PCT/CN2018/124073
International Filing Date 26.12.2018
IPC
H03H 3/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 9/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H03H 9/56 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46Filters
54comprising resonators of piezo-electric or electrostrictive material
56Monolithic crystal filters
H03H 9/15 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
CPC
H03H 3/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 9/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
H03H 9/15
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
H03H 9/56
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
46Filters
54comprising resonators of piezo-electric or electrostrictive material
56Monolithic crystal filters
Applicants
  • 天津大学 TIANJIN UNIVERSITY [CN]/[CN]
  • 诺思(天津)微系统有限责任公司 ROFS MICROSYSTEM (TIANJIN) CO., LTD. [CN]/[CN]
Inventors
  • 庞慰 PANG, Wei
  • 高传海 GAO, Chuanhai
  • 张孟伦 ZHANG, Menglun
Agents
  • 北京汉智嘉成知识产权代理有限公司 CHINA SMART INTELLECTUAL PROPERTY LTD.
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) CONNECTING STRUCTURE OF FLEXIBLE SUBSTRATE THIN FILM BULK ACOUSTIC WAVE FILTER
(FR) STRUCTURE DE CONNEXION D'UN FILTRE À ONDES ACOUSTIQUES DE VOLUME À COUCHES MINCES ET À SUBSTRAT SOUPLE
(ZH) 柔性基底薄膜体声波滤波器的连接结构
Abstract
(EN)
A connecting structure of a flexible substrate thin film bulk acoustic wave filter, comprising: a first top electrode and a second top electrode, wherein a gap is formed between said top electrodes; piezoelectric layers (511, 611, 720, 811, 911, 1011) below the first top electrode and the second top electrode; one or two bottom electrodes (512, 612, 730, 812, 912, 1012) below the piezoelectric layers (511, 611, 720, 811, 911, 1011); and a flexible substrate (520, 620, 750, 820, 920, 1020) below the bottom electrode (512, 612, 730, 812, 912, 1012); wherein the piezoelectric layers (511, 611, 720, 811, 911, 1011) is not arranged below the gap between the two top electrodes (510, 610, 710, 810, 910, 1010).
(FR)
L'invention concerne une structure de connexion d'un filtre à ondes acoustiques de volume à couches minces et à substrat souple comprenant : une première électrode supérieure et une seconde électrode supérieure, un espace étant formé entre lesdites électrodes supérieures; des couches piézoélectriques (511, 611, 720, 811, 911, 1011) en dessous de la première électrode supérieure et de la seconde électrode supérieure; une ou deux électrodes inférieures (512, 612, 730, 812, 912, 1012) au-dessous des couches piézoélectriques (511, 611, 720, 811, 911, 1011); et un substrat souple (520, 620, 750, 820, 920, 1020) en dessous de l'électrode inférieure (512, 612, 730, 812, 912, 1012); les couches piézoélectriques (511, 611, 720, 811, 911, 1011) n'étant pas disposées au-dessous de l'espace entre les deux électrodes supérieures (510, 610, 710, 810, 910, 1010).
(ZH)
一种柔性基底薄膜体声波滤波器的连接结构,包括:第一顶电极和第二顶电极,二者之间具有间隙;所述第一顶电极和第二顶电极下方的压电层(511,611,720,811,911,1011);所述压电层(511,611,720,811,911,1011)下方的一个或两个底电极(512,612,730,812,912,1012);所述底电极(512,612,730,812,912,1012)下方的柔性基底(520,620,750,820,920,1020);其中,所述两个顶电极(510,610,710,810,910,1010)之间的间隙的下方不具有所述压电层(511,611,720,811,911,1011)。
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