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1. WO2020132912 - THIN FILM SEMICONDUCTOR STRUCTURE, IMAGE SENSOR, AND HANDHELD DEVICE

Publication Number WO/2020/132912
Publication Date 02.07.2020
International Application No. PCT/CN2018/123742
International Filing Date 26.12.2018
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G06K 9/00 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
CPC
G06K 9/00
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
Applicants
  • 深圳市汇顶科技股份有限公司 SHENZHEN GOODIX TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 杨富强 YANG, Fu-chiang
  • 杨孟达 YANG, Meng-ta
Agents
  • 北京天驰君泰律师事务所 TIANTAI LAW FIRM
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN FILM SEMICONDUCTOR STRUCTURE, IMAGE SENSOR, AND HANDHELD DEVICE
(FR) STRUCTURE SEMI-CONDUCTRICE À FILM MINCE, CAPTEUR D'IMAGE ET APPAREIL PORTATIF
(ZH) 薄膜半导体结构、图像传感器及手持装置
Abstract
(EN)
A thin film semiconductor structure (100), comprising: a substrate (102); a capacitor (108) comprising an upper board (108-1) and a lower board (108-3), the capacitor (108) being configured on the substrate (102); and a photodiode (112) configured above and coupled to the capacitor (108), such that the capacitor (108) is located between the substrate (102) and the photodiode (112). An image sensor (400) and a handheld device (500) which have the thin film semiconductor structure (100) implement a high filling factor of the image sensor (400) without affecting the stability during reading a sensing value of the photodiode (112).
(FR)
Structure semi-conductrice à film mince (100), comprenant : un substrat (102); un condensateur (108) comprenant une carte supérieure (108-1) et une carte inférieure (108-3), le condensateur (108) étant configuré sur le substrat (102); et une photodiode (112) configurée au-dessus et couplée au condensateur (108), de sorte que le condensateur (108) soit situé entre le substrat (102) et la photodiode (112). Un capteur d'image (400) et un appareil portatif (500) qui ont la structure semi-conductrice à film mince (100) mettent en œuvre un facteur de remplissage élevé du capteur d'image (400) sans affecter la stabilité pendant la lecture d'une valeur de détection de la photodiode (112).
(ZH)
一种薄膜半导体结构(100),包括:基板(102);电容(108),包括上板(108-1)及下板(108-3),所述电容(108)被配置在所述基板(102)上;以及光电二极管(112),被配置在所述电容(108)的上方且耦接至所述电容(108),使所述电容(108)在所述基板(102)和所述光电二极管(112)之间。具有所述薄膜半导体结构(100)的图像传感器(400)以及手持装置(500),具有较高的图像传感器(400)的填充系数,又不会影响读取光电二极管(112)的感测值时的稳定度。
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Latest bibliographic data on file with the International Bureau