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1. WO2020132801 - ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/132801
Publication Date 02.07.2020
International Application No. PCT/CN2018/123097
International Filing Date 24.12.2018
IPC
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
H01L 21/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
CPC
H01L 21/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
H01L 21/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
H01L 2224/96
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
96the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
Applicants
  • 深圳市柔宇科技有限公司 SHENZHEN ROYOLE TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventors
  • 袁泽 YUAN, Ze
  • 康佳昊 KANG, Jiahao
  • 魏鹏 WEI, Peng
  • 管曦萌 GUAN, Ximeng
Agents
  • 广州三环专利商标代理有限公司 SCIHEAD IP LAW FIRM
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF ÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION
(ZH) 电子器件及其制作方法
Abstract
(EN)
An electronic device and a manufacturing method therefor. The manufacturing method for an electronic device comprises the following steps: providing a rigid substrate (10) (S101); disposing, on the rigid substrate (10), an electronic device (1) to be peeled off, the electronic device (1) comprising a plurality of function units (20) arranged spaced from one another and a flexible layer (30) covering the plurality of function units (20) (S103); and performing a release process such that the plurality of function units (20) and the flexible layer (30) are released together from the rigid substrate (10) (S105). The manufacturing method for an electronic device is compatible with the manufacturing techniques for semiconductors and display panels in the prior art and can increase production efficiency.
(FR)
La présente invention concerne un dispositif électronique et son procédé de fabrication. Le procédé de fabrication d'un dispositif électronique comprend les étapes suivantes consistant : à fournir un substrat rigide (10) (S101) ; à disposer, sur le substrat rigide (10), un dispositif électronique (1) à décoller, le dispositif électronique (1) comprenant une pluralité d'unités fonctionnelles (20) espacées les unes des autres et une couche souple (30) recouvrant la pluralité d'unités fonctionnelles (20) (S103) ; et à réaliser un processus de retrait de telle sorte que la pluralité d'unités fonctionnelles (20) et la couche souple (30) sont retirées ensemble du substrat rigide (S105). Le procédé de fabrication d'un dispositif électronique est compatible avec les techniques de fabrication de semi-conducteurs et d'écrans d'affichage dans l'état de la technique et peut augmenter l'efficacité de production.
(ZH)
一种电子器件及其制作方法。所述电子器件的制作方法包括如下步骤:提供刚性基板(10) (S101);在所述刚性基板(10)上设置待剥离的电子器件(1),所述电子器件(1)包括间隔排列的若干功能单元(20)和包覆若干所述功能单元(20)的弹性层(30) (S103);以及进行离型处理,以使若干所述功能单元(20)与所述弹性层(30)一同从所述刚性基板(10)上分离(S105)。该电子器件的制作方法,可与现有的半导体、显示面板等制造技术兼容,提高了生产效率。
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