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1. WO2020118289 - ELECTRONICS PACKAGING USING ORGANIC ELECTRICALLY INSULATING LAYERS

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[ EN ]

CLAIMS

What is claimed is:

1. A device comprising:

a first baseplate;

a semiconductor;

a first layer of polyimide substrate bonded to the first baseplate; and

a first voltage terminal; wherein:

the semiconductor is configured to be in electrical communication with the first voltage terminal, and

the semiconductor is configured to be in thermal communication with the first layer of polyimide substrate.

2. The device of claim 1, further comprising a die attach, wherein:

the die attach is in thermal communication with the semiconductor device and the polyimide substrate, and

the die attach is positioned between the semiconductor device and the polyimide substrate.

3. The device of claim 1, further comprising:

a second voltage terminal;

a second baseplate; and

a second layer of polyimide substrate; wherein:

the semiconductor is configured to be in thermal communication with the second voltage terminal,

the semiconductor device is configured to be in thermal communication with the second layer of polyimide substrate, and

the second layer of polyimide substrate is bonded to the second baseplate.

4. The device of claim 1, wherein the first voltage terminal is a direct current (DC) terminal.

5. A device comprising:

a first plate being substantially planar;

a second plate being substantially planar and configured to be substantially parallel to the first plate;

a first layer of polyimide substrate bonded to the first plate;

a second layer of polyimide substrate bonded to the second plate;

a first semiconductor thermally connected to the first layer of polyimide substrate; and a second semiconductor thermally connected to the second layer of polyimide substrate; wherein:

the first semiconductor and the second semiconductor are in electrical communication by a first voltage terminal.

6. The device of claim 5, wherein the first voltage terminal is an alternating current (CD) terminal.

7. The device of claim 5, further comprising:

a first die attach connected to a first side of the first semiconductor;

a second die attach connected to a second side of the first semiconductor;

a third die attach connected to a third side of the second semiconductor;

a fourth die attach connected to a fourth side of the second semiconductor; and a second voltage terminal; wherein:

the second voltage terminal is in thermal communication with the polyimide substrate, and

the second voltage terminal is a direct current (DC) terminal.

8. A system comprising:

a first plurality of semiconductor devices, each substantially planar;

a first voltage terminal having a substantially planar shape in a first plane, with a plurality of planar protrusions extending radially outward from a point in the first plane, each configured to be electrically connected to a surface of a respective semiconductor device;

a second voltage terminal having a substantially planar shape in a second plane, with a plurality of planar protrusions extending radially outward from a point in the first plane, each configured to be electrically connected to a surface of a respective semiconductor device;

a first polyimide substrate having a substantially planar shape, being in thermal communication with the plurality of semiconductor devices, the first voltage terminal, and the second voltage terminal; and

a first baseplate in physical contact with the polyimide substrate.

9. The system of claim 8, wherein:

the first voltage terminal is a gate terminal, and

the second voltage terminal is a direct current (DC) terminal.

10. The system of claim 8, further comprising:

a first plurality of die attaches, each configured to be in thermal communication with a respective semiconductor device and the second voltage terminal; and

a second plurality of die attaches, each configured to be in thermal communication with a respective semiconductor device and the first voltage terminal.

11. The system of claim 10, wherein the first plurality of die attaches and the second plurality of die attaches are substantially planar and comprise a metal.

12. The system of claim 8, further comprising:

a second plurality of semiconductor devices, each substantially planar;

a third voltage terminal having a substantially planar shape in a first plane, with a plurality of planar protrusions extending radially outward from a point in the first plane, each configured to be electrically connected to a surface of a respective semiconductor device;

a fourth voltage terminal having a substantially planar shape in a second plane, with a plurality of planar protrusions extending radially outward from a point in the first plane, each configured to be electrically connected to a surface of a respective semiconductor device;

a second polyimide substrate having a substantially planar shape, being in thermal communication with the plurality of semiconductor devices, the first voltage terminal, and the second voltage terminal; and

a second baseplate in physical contact with the polyimide substrate.

13. The system of claim 12, wherein:

the third voltage terminal is a gate terminal, and

the fourth voltage terminal is a direct current (DC) terminal.

14. The system of claim 12, further comprising:

a third plurality of die attaches, each configured to be in thermal communication with a respective semiconductor device and the fourth voltage terminal; and

a fourth plurality of die attaches, each configured to be in thermal communication with a respective semiconductor device and the third voltage terminal.

15. The system of claim 14, wherein the third plurality of die attaches and the fourth plurality of die attaches are substantially planar and comprise a metal.