Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020118090 - CORROSION RESISTANT GROUND SHIELD OF PROCESSING CHAMBER

Publication Number WO/2020/118090
Publication Date 11.06.2020
International Application No. PCT/US2019/064747
International Filing Date 05.12.2019
IPC
H01L 21/687 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 23/373 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
373Cooling facilitated by selection of materials for the device
CPC
C23C 16/4581
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4581characterised by material of construction or surface finish of the means for supporting the substrate
C23C 16/4583
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
C23C 16/46
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
H01J 2237/2001
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
2001Maintaining constant desired temperature
H01J 2237/3323
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
332Coating
3322Problems associated with coating
3323uniformity
H01J 37/32697
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32697Electrostatic control
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • LUBOMIRSKY, Dmitry
  • HE, Xiao Ming
  • SUN, Jennifer Y.
  • WU, Xiaowei
  • KALITA, Laksheswar
  • PARK, Soonam
Agents
  • KIMES, Benjamin A.
  • PORTNOVA, Marina
  • OGURCHAK, Audrey
Priority Data
16/212,58006.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CORROSION RESISTANT GROUND SHIELD OF PROCESSING CHAMBER
(FR) ÉCRAN DE MISE À LA TERRE RÉSISTANT À LA CORROSION D'UNE CHAMBRE DE TRAITEMENT
Abstract
(EN)
A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.
(FR)
La présente invention porte sur un ensemble support de substrat, comprenant un écran de mise à la terre et un dispositif de chauffage qui est entouré par l'écran de mise à la terre. L'écran de mise à la terre comprend une plaque. Dans un mode de réalisation, l'écran de mise à la terre est composé d'un corps en céramique, et comprend une couche électroconductrice et une première couche de protection sur la surface supérieure de la plaque. Dans un autre mode de réalisation, l'écran de mise à la terre est composé d'un corps électroconducteur et d'une première couche de protection sur la surface supérieure de la plaque.
Latest bibliographic data on file with the International Bureau