Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020117939 - APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE

Note: Text based on automatic Optical Character Recognition processes. Please use the PDF version for legal matters

[ EN ]

Claims

1. A plasma source, comprising:

a plasma chamber, the plasma chamber comprising a first side, defining a first plane; and

an extraction assembly, disposed adjacent to the first side of the plasma chamber, the extraction assembly comprising at least two electrodes,

wherein a first electrode is disposed immediately adjacent the side of the plasma chamber,

wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane,

wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture,

wherein the first aperture defines a lateral displacement from the second aperture along a second direction, parallel to the first plane,

wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

2. The plasma source of claim 1, the extraction assembly comprising three electrodes, wherein a third electrode defines a second vertical displacement from the second electrode along the first direction,

wherein the third electrode comprises a third aperture,

wherein the third aperture defines a second lateral displacement from the second aperture along the second direction,

wherein the second vertical displacement and the second lateral displacement define the non-zero angle of inclination.

3. The plasma source of claim 1, wherein the first aperture and the second aperture are elongated along a third direction, lying within the first plane, and extending perpendicularly to the second direction.

4. The plasma source of claim 1, wherein the first electrode and the second electrode have a staggered shape, comprising an upper portion, an angled portion, and a lower portion, the upper portion and the lower portion being parallel to the first plane.

5. The plasma source of claim 1, further comprising an extraction power supply, coupled to the extraction assembly, arranged to generate a set of extraction voltages on the extraction assembly, wherein an ion beam is extracted from the plasma chamber when a plasma is present.

6. The plasma source of claim 1, wherein the first electrode and the second electrode are configured to shift with respect to one another along the second direction.

7. A method of patterning a substrate, comprising:

providing the substrate, wherein a main surface of the substrate defines a substrate plane, wherein the substrate comprises a grating layer and a base layer, subjacent the grating layer;

generating a plasma in a plasma chamber, adjacent to the substrate; and

applying an extraction voltage to an extraction assembly, adjacent the plasma chamber, the extraction assembly comprising at least two electrodes, wherein the at least two electrodes define an angled extraction tunnel, disposed at a non-zero angle of inclination with respect to a perpendicular to the substrate plane,

wherein an angled ion beam is extracted from the extraction assembly, the angled ion beam defining a non-zero angle of incidence with respect to the substrate plane,

wherein the angled ion beam etches the grating layer to form an angled grating.

8. The method of claim 7, wherein the non-zero angle of incidence is between 5 degrees and 85 degrees.

9. The method of claim 7, wherein the plasma generates a plurality of radicals, and

wherein the plurality of radicals are directed through the angled extraction tunnel as a radical beam having a beam trajectory matching the non-zero angle of incidence of the angled ion beam.

10. The method of claim 9, further comprising providing a grating mask on the grating layer, wherein the angled ion beam and the radical beam comprise an angled reactive ion etching (RIE) beam, wherein the angled RIE beam etches the grating layer to form a plurality of grating structures, the plurality of grating structures defining a first angled sidewall and a second angled sidewall, the second angled sidewall being parallel to the first angled sidewall.

11. The method of claim 7, wherein the extraction assembly comprises a first electrode and a second electrode, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture, wherein the first aperture defines a lateral displacement from the second aperture along a scan direction, parallel to the substrate plane, and wherein the first aperture and the second aperture are elongated in a width direction, perpendicular to the scan direction.

12. The method of claim 11, further comprising scanning the substrate along the scan direction while the angled ion beam etches the grating layer.

13. The method of claim 12, further comprising adjusting the extraction assembly to

change the non-zero angle of incidence during the scanning.

14. A system, comprising:

a plasma chamber, the plasma chamber comprising a first side, defining a first plane; an extraction assembly, disposed adjacent the side of the plasma chamber, the extraction assembly comprising at least two electrodes,

wherein the at least two electrodes define an angled extraction tunnel, disposed at a non-zero angle of inclination with respect to a perpendicular to the first plane;

a substrate stage, configured to support a substrate, wherein a main surface of the substrate defines a substrate plane, parallel to the first plane, the substrate stage further configured to scan the substrate with respect to the angled extraction tunnel; and

an extraction power supply, coupled to the extraction assembly, and arranged to apply a voltage, wherein an angled ion beam is directed to the substrate through the extraction assembly when a plasma is present in the plasma chamber, the angled ion beam defining a non-zero angle of incidence with respect to the first plane.

15. The system of claim 14, wherein a first electrode and a second electrode of the at least two electrodes have a staggered shape, comprising an upper portion, an angled portion, and a lower portion, the upper portion and the lower portion being parallel to the first plane.